规格：MSL MSL 1 -无限制,
ON SEMICONDUCTOR
单晶体管 双极, 通用, NPN, 40 V, 300 MHz, 1.5 W, 600 mA, 300 hFE
(EN)
STMICROELECTRONICS
单晶体管 双极, NPN, 100 V, 15 W, 3 A, 10 hFE
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -30 A, -40 V, 0.019 ohm, -10 V, -2.6 V
(EN)
DIODES INC.
单晶体管 双极, NPN, 25 V, 240 MHz, 2 W, 3 A, 200 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 17 A, 100 V, 0.09 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 240 A, 60 V, 0.0015 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 295 A, 60 V, 0.00165 ohm, 10 V, 3.7 V
(EN)LITTELFUSE
三端双向可控硅, 800 V, 4 A, TO-252, 10 mA, 1.3 V, 2 W
(EN)
ON SEMICONDUCTOR
MOSFET Transistor, N Channel, 20 A, 60 V, 37.5 mohm, 10 V, 2.91 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 95 A, 200 V, 0.0127 ohm, 10 V, 3 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 1.1 A, 60 V, 450 mohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -45 V, 150 MHz, 310 mW, -100 mA, 200 hFE
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -28 A, -100 V, 0.057 ohm, -10 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, N通道, 80 A, 2 V, 267 W, 650 V, TO-263AB, 3 引脚
(EN)INFINEON
晶体管, MOSFET, N沟道, 42 A, 100 V, 0.036 ohm, 10 V, 4 V
(EN)NEXPERIA
单晶体管 双极, PNP, -400 V, 55 MHz, 700 mW, -250 mA, 200 hFE
(EN)
VISHAY
晶体管, MOSFET, N沟道, 2.5 A, 60 V, 100 mohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR
单晶体管 双极, NPN, 80 V, 50 MHz, 2 W, 10 A, 40 hFE
(EN)
VISHAY
晶体管, MOSFET, P沟道, 18.6 A, -40 V, 0.0075 ohm, 20 V, -3 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 600 mA, 450 V, 3.2 ohm, 10 V, 3.75 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, JFET, JFET, -25 V, 24 mA, 60 mA, -6.5 V, SOT-23, JFET
(EN)INFINEON
晶体管, MOSFET, N沟道, 362 A, 40 V, 0.0007 ohm, 10 V, 3 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 14 A, 100 V, 0.049 ohm, 10 V, 3.2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 89 A, 55 V, 0.01 ohm, 10 V, 2 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 51 A, 100 V, 12.7 mohm, 10 V, 3 V
(EN)
