规格：MSL MSL 1 -无限制,
DIODES INC.
单晶体管 双极, PNP, 40 V, 150 MHz, 500 mW, -1 A, 300 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 43 A, 150 V, 0.042 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, 23 A, -100 V, 117 mohm, 20 V, 4 V
(EN)
STMICROELECTRONICS
单晶体管 双极, NPN, 1.2 kV, 1.6 W, 200 mA, 3 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 195 A, 40 V, 0.00097 ohm, 10 V, 3.9 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 60 A, 100 V, 0.0065 ohm, 10 V, 1.8 V
(EN)
INFINEON
双路场效应管, MOSFET, N和P沟道, 6.6 A, 20 V, 0.023 ohm, 4.5 V, 700 mV
(EN)
NEXPERIA
晶体管 双极-射频, NPN, 32 V, 250 MHz, 250 mW, 100 mA, 460 hFE
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 9.8 A, 20 V, 11 mohm, 4.5 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 240 A, 75 V, 0.0017 ohm, 10 V, 3.7 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 7 A, 650 V, 0.5 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 59 A, 100 V, 14 mohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 160 A, 40 V, 0.0012 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 10 A, 30 V, 0.0092 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 36 A, 100 V, 44 mohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 42 A, 40 V, 0.0043 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 33 A, 150 V, 0.014 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, 达林顿, NPN, 350 V, 2 MHz, 150 W, 10 A, 500 hFE
(EN)DIODES INC.
双路场效应管, MOSFET, AEC-Q101, 双路N和P通道, 6 A, 30 V, 0.019 ohm, 10 V, 2 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -9 A, -30 V, 0.026 ohm, -10 V, -2.5 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 150 mA, 60 V, 5 ohm, 10 V, 2.4 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -6.5 A, -200 V, 0.8 ohm, -10 V, -4 V
(EN)
NEXPERIA
晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 2.2 kohm, 10 kohm, 0.22 电阻比率
(EN)INFINEON
晶体管, MOSFET, P沟道, -2.9 A, -60 V, 0.11 ohm, -10 V, -3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 131 A, 55 V, 0.0046 ohm, 10 V, 4 V
(EN)
