规格：MSL MSL 1 -无限制,
INFINEON
晶体管, MOSFET, P沟道, -8.8 A, -60 V, 0.23 ohm, -10 V, -3 V
(EN)
ROHM
双路场效应管, MOSFET, N和P沟道, 1.5 A, 20 V, 0.17 ohm, 4.5 V, 1.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 11 A, 60 V, 0.107 ohm, 5 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 100 V, 20 W, 8 A, 1000 hFE
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 2 A, 30 V, 120 mohm, 10 V, 1 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4 A, 650 V, 1.2 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0032 ohm, 10 V, 3 V
(EN)
ROHM
单晶体管 双极, NPN, 40 V, 300 MHz, 200 mW, 150 mA, 100 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 120 A, 100 V, 0.0048 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -340 mA, -60 V, 1.2 ohm, -10 V, -1.9 V
(EN)
NEXPERIA
单晶体管 双极, 通用, NPN, 45 V, 100 MHz, 250 mW, 100 mA, 110 hFE
(EN)
ON SEMICONDUCTOR
单晶体管 双极, 通用, PNP, -300 V, 50 MHz, 1.5 W, -50 mA, 50 hFE
(EN)
INFINEON
晶体管, MOSFET, P沟道, -80 A, -30 V, 0.0056 ohm, -10 V, -1.5 V
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 800 mA, 100 V, 1.5 ohm, 10 V, 800 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 45 V, 1.5 W, 1.5 A, 40 hFE
(EN)
ROHM
晶体管 双极预偏置/数字, AEC-Q101, 单路PNP, -50 V, -100 mA, 47 kohm, 47 kohm, 1 电阻比率
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 60 A, 30 V, 0.0013 ohm, 10 V, 1.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 195 A, 60 V, 0.00165 ohm, 10 V, 3.7 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 53.7 A, 150 V, 0.0148 ohm, 10 V, 4.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -18 A, -20 V, 0.0064 ohm, -4.5 V, -500 mV
(EN)DIODES INC.
单晶体管 双极, 达林顿, NPN, 30 V, 170 MHz, 2 W, 1 A, 20000 hFE
(EN)INFINEON
晶体管, MOSFET, N沟道, 42 A, 75 V, 26 mohm, 10 V, 4 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 900 mA, 100 V, 650 mohm, 10 V, 3 V
(EN)
