规格：MSL MSL 1 -无限制,
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.00379 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 10.8 A, 30 V, 0.011 ohm, 4.5 V, 3 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 21 A, 600 V, 0.15 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 40 A, 100 V, 0.011 ohm, 10 V, 1.2 V
(EN)
NEXPERIA
单晶体管 双极, NPN, 60 V, 220 MHz, 270 mW, 1 A, 400 hFE
(EN)
DIODES INC.
单晶体管 双极, 达林顿, NPN, 120 V, 150 MHz, 2 W, 1.5 A, 5000 hFE
(EN)
ON SEMICONDUCTOR
单晶体管 双极, PNP, -50 V, 130 MHz, 20 W, -5 A, 140 hFE
(EN)DIODES INC.
单晶体管 双极, 达林顿, PNP, 100 V, 140 MHz, 625 mW, 800 mA, 60000 hFE
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 17 A, 600 V, 0.17 ohm, 10 V, 4 V
(EN)NEXPERIA
单晶体管 双极, PNP, -150 V, 35 MHz, 730 mW, -2 A, 180 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 116 A, 30 V, 0.007 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 2.7 A, 400 V, 850 mohm, 10 V, 3.75 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 52 A, 200 V, 0.041 ohm, 10 V, 5 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 10 A, 400 V, 550 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 110 A, 60 V, 0.0042 ohm, 10 V, 3.7 V
(EN)
NEXPERIA
双极晶体管阵列, AEC-Q101, 双PNP, -100 V, 1.25 W, -3 A, 10 hFE, SOT-1205
(EN)
INFINEON
射频晶体管, NPN, 4.5V, 100MA, SOT-343
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 35 A, 25 V, 0.0065 ohm, 10 V, 1.8 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -13 A, -150 V, 0.29 ohm, -10 V, -4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 17 A, 800 V, 0.25 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -70 A, -60 V, 0.01 ohm, -10 V, -2.6 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 27 A, 40 V, 0.0019 ohm, 10 V, 1.8 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -410 mA, -25 V, 0.85 ohm, -4.5 V, -820 mV
(EN)
