规格：MSL MSL 1 -无限制,
DIODES INC.
单晶体管 双极, PNP, -80 V, 50 MHz, 300 mW, -500 mA, 100 hFE
(EN)
TEXAS INSTRUMENTS
双极晶体管阵列, NPN, 50 V, 500 mA, SOIC
(EN)
ON SEMICONDUCTOR
单晶体管 双极, NPN, 60 V, 100 MHz, 540 mW, 2 A, 100 hFE
(EN)
ON SEMICONDUCTOR
单晶体管 双极, NPN, 60 V, 2 W, 10 A, 100 hFE
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -3 A, -8 V, 0.0162 ohm, -4.5 V, -800 mV
(EN)
PANASONIC ELECTRONIC COMPONENTS
晶体管, MOSFET, N沟道, 100 mA, 60 V, 6 ohm, 4 V, 1.2 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 70 A, 30 V, 0.002 ohm, 10 V, 1.7 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -110 A, -60 V, 0.0055 ohm, -10 V, -3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 56 A, 30 V, 9.5 mohm, 10 V, 1.8 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 26 A, 30 V, 0.0013 ohm, 10 V, 1.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 80 A, 30 V, 4.2 mohm, 10 V, 1 V
(EN)
STMICROELECTRONICS
晶闸管, 600 V, 25 mA, 10 A, 16 A, TO-220AB, 3 引脚
(EN)DIODES INC.
晶体管, MOSFET, 低电压, N沟道, 4.6 A, 30 V, 47 mohm, 10 V, 1 V
(EN)
NEXPERIA
单晶体管 双极, NPN, 20 V, 115 MHz, 600 mW, 7 A, 550 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 120 A, 60 V, 0.0026 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR
单晶体管 双极, PNP, -60 V, 2 W, -10 A, 100 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 43 A, 60 V, 0.0126 ohm, 20 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -7.2 A, -40 V, 0.036 ohm, -10 V, -1.2 V
(EN)NEXPERIA
单晶体管 双极, 通用, NPN, 40 V, 380 MHz, 250 mW, 25 mA, 67 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 150 A, 55 V, 0.0037 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -20 A, -30 V, 0.0086 ohm, -10 V, -1.8 V
(EN)
NEXPERIA
单晶体管 双极, PNP, -40 V, 110 MHz, 1.35 W, -6 A, 50 hFE
(EN)
VISHAY
晶体管, MOSFET, N沟道, 5.3 A, 500 V, 1.2 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管 双极-射频, PNP, -45 V, 100 MHz, 250 mW, -100 mA, 260 hFE
(EN)DIODES INC.
单晶体管 双极, PNP, 60 V, 150 MHz, 500 mW, -1 A, 100 hFE
(EN)
