规格：MSL MSL 1 -无限制,
NEXPERIA
单晶体管 双极, NPN, 150 V, 33 MHz, 730 mW, 2 A, 240 hFE
(EN)
ROHM
晶体管, MOSFET, P沟道, -100 mA, -20 V, 2.5 ohm, -4.5 V, -1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -40 V, 200 MHz, 350 mW, -800 mA, 30 hFE
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 5.2 A, 650 V, 1.26 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 60 V, 3780 μohm, 5 V, 1.7 V
(EN)
INFINEON
场效应管, MOSFET, 双路, N沟道, 20V, 0.95A, SOT-363-6
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 49 A, 100 V, 0.0064 ohm, 10 V, 1.9 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 18.5 A, 500 V, 0.17 ohm, 13 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 30 V, 1.3 mohm, 10 V, 1.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 98 A, 55 V, 8 mohm, 10 V, 4 V
(EN)
ROHM
功率场效应管, MOSFET, N沟道, 35 A, 1.2 kV, 0.08 ohm, 18 V, 4 V
(EN)
LITTELFUSE
晶闸管, 100 V, 30 mA, 16 A, 25 A, TO-220AB, 3 引脚
(EN)NEXPERIA
晶体管, MOSFET, TrenchMOS, N沟道, 37 A, 80 V, 0.0205 ohm, 10 V, 1.7 V
(EN)
ROHM
晶体管 双极预偏置/数字, AEC-Q101, 单路NPN, 50 V, 100 mA, 10 kohm, 10 kohm, 1 电阻比率
(EN)
ROHM
晶体管, MOSFET, P沟道, -4 A, -12 V, 0.022 ohm, -4.5 V, -300 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 42 A, 55 V, 0.011 ohm, 10 V, 3 V
(EN)
DIODES INC.
单晶体管 双极, PNP, 60 V, 250 MHz, 1.25 W, 3 A, 200 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 20 A, 40 V, 0.0047 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 93 A, 30 V, 3.5 mohm, 10 V, 1 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 60 V, 3.6 mohm, 10 V, 3 V
(EN)DIODES INC.
单晶体管 双极, NPN, 15 V, 120 MHz, 625 mW, 3 A, 450 hFE
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 3.9 A, 600 V, 1 ohm, 10 V, 5 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 2.5 A, 45 V, 0.07 ohm, 10 V, 2.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 12 A, 550 V, 0.27 ohm, 10 V, 3 V
(EN)
