规格：MSL MSL 1 -无限制,
INFINEON
晶体管, MOSFET, N沟道, 24 A, 200 V, 0.0637 ohm, 10 V, 5 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0015 ohm, 10 V, 1.45 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 110 A, 30 V, 0.0033 ohm, 10 V, 1 V
(EN)
INFINEON
晶体管 双极-射频, NPN, 6 V, 14 GHz, 210 mW, 35 mA, 90 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 15 A, 30 V, 8 mohm, 10 V, 1.8 V
(EN)
ROHM
晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 2.2 kohm, 47 kohm, 0.047 电阻比率
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 16 A, 600 V, 0.4 ohm, 10 V, 4 V
(EN)
NEXPERIA
单晶体管 双极, PNP, -60 V, 145 MHz, 420 mW, -1 A, 100 hFE
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 75 V, 7.8 mohm, 10 V, 4 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 75 A, 100 V, 0.0065 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 8 A, 800 V, 0.56 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 100 V, 80 W, 12 A, 100 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0016 ohm, 10 V, 2 V
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 40 A, 25 V, 1.8 mohm, 4.5 V, 1.4 V
(EN)
ON SEMICONDUCTOR
MOSFET Transistor, N Channel, 45 A, 60 V, 0.021 ohm, 10 V, 2.8 V
(EN)NEXPERIA
单晶体管 双极, NPN, 80 V, 180 MHz, 420 mW, 1 A, 63 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -60 V, 1.5 W, -1.2 A, 25 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -30 V, 100 MHz, 500 mW, -1 A, 70 hFE
(EN)
VISHAY
晶体管, MOSFET, N沟道, 26 A, 150 V, 0.036 ohm, 10 V, 4.5 V
(EN)
ROHM
晶体管 双极预偏置/数字, 双路NPN, 双路 NPN, 50 V, 100 mA, 4.7 kohm, 4.7 kohm, 1 电阻比率
(EN)
ROHM
双极晶体管阵列, 双路, NPN, PNP, 50 V, 150 mW, 150 mA, 120 hFE, SOT-353
(EN)
DIODES INC.
单晶体管 双极, NPN, 60 V, 130 MHz, 3 W, 6 A, 200 hFE
(EN)
NEXPERIA
单晶体管 双极, PNP, 50 V, 300 mW, 3 A, 200 hFE
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 3.3 A, 100 V, 0.075 ohm, 10 V, 1.7 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 2 A, 800 V, 2.4 ohm, 10 V, 3 V
(EN)
