规格：MSL MSL 1 -无限制,
INFINEON
晶体管, MOSFET, N沟道, 100 A, 75 V, 0.003 ohm, 10 V, 3.1 V
(EN)
NEXPERIA
单晶体管 双极, PNP, -45 V, 145 MHz, 500 mW, -1 A, 63 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -100 V, 1.75 W, -8 A, 100 hFE
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 21 A, 600 V, 0.15 ohm, 10 V, 2 V
(EN)
STMICROELECTRONICS
单晶体管 双极, PNP, -600 V, 1.6 W, -500 mA, 120 hFE
(EN)
DIODES INC.
双路场效应管, MOSFET, AEC-Q101, 双N沟道, 280 mA, 50 V, 2 ohm, 5 V, 1 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 12 A, 600 V, 0.32 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 49 A, 55 V, 0.0175 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 260 A, 75 V, 2.1 mohm, 20 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -40 V, 250 MHz, 350 mW, -200 mA, 30 hFE
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -4.6 A, -20 V, 0.029 ohm, -4.5 V, 960 mV
(EN)INFINEON
晶体管, MOSFET, N沟道, 13 A, 200 V, 235 mohm, 10 V, 5.5 V
(EN)
INFINEON
双路场效应管, MOSFET, 双P沟道, 9 A, -20 V, 18 mohm, -4.5 V, -1 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 12 A, 60 V, 80 mohm, 10 V, 2 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -200 mA, -200 V, 10 ohm, -10 V, -2.8 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 2.9 A, 12 V, 0.037 ohm, 4.5 V, 1 V
(EN)INFINEON
单晶体管, IGBT, 11 A, 1.75 V, 58 W, 600 V, TO-252, 3 引脚
(EN)VISHAY
晶体管, MOSFET, P沟道, -4.7 A, -60 V, 0.1 ohm, -10 V, -3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 10 A, 30 V, 0.01 ohm, 10 V, 1.6 V
(EN)NEXPERIA
单晶体管 双极, PNP, -80 V, 145 MHz, 650 mW, -1 A, 100 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 53 A, 30 V, 0.0067 ohm, 10 V, 2.2 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 1.5 A, 20 V, 0.18 ohm, 4.5 V, 400 mV
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 3.8 A, 70 V, 130 mohm, 10 V, 1 V
(EN)NEXPERIA
单晶体管 双极, PNP, -20 V, 140 MHz, 500 mW, -1 A, 160 hFE
(EN)
