规格：MSL MSL 1 -无限制,
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 8 A, 12 V, 0.0099 ohm, 4.5 V, 950 mV
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 2.4 A, 30 V, 135 mohm, 10 V, 1 V
(EN)
DIODES INC.
单晶体管 双极, NPN, 50 V, 200 MHz, 1.25 W, 4 A, 450 hFE
(EN)
NEXPERIA
单晶体管 双极, 开关, NPN, 40 V, 300 MHz, 250 mW, 600 mA, 40 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -6.5 A, -20 V, 0.026 ohm, -4.5 V, -700 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 120 A, 60 V, 0.0024 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 40 A, 100 V, 0.02 ohm, 10 V, 3 V
(EN)
DIODES INC.
双路场效应管, MOSFET, N和P沟道, 115 mA, 60 V, 13.5 ohm, 10 V, 2.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 375 A, 60 V, 0.0011 ohm, 10 V, 2.9 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5.5 A, 650 V, 400 mohm, 10 V, 4 V
(EN)
NEXPERIA
单晶体管 双极, PNP, -400 V, 55 MHz, 300 mW, -250 mA, 200 hFE
(EN)
NEXPERIA
双极晶体管阵列, 双NPN, 60 V, 510 mW, 1 A, 70 hFE, SOT-1118
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 3 A, 50 V, 0.13 ohm, 10 V, 1 V
(EN)
DIODES INC.
单晶体管 双极, NPN, 12 V, 170 MHz, 900 mW, 1 A, 270 hFE
(EN)
ROHM
功率场效应管, MOSFET, N沟道, 10 A, 1.2 kV, 0.45 ohm, 18 V, 4 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, PNP, -80 V, 90 MHz, 20 W, -8 A, 40 hFE
(EN)
STMICROELECTRONICS
三端双向可控硅, 开关, 800 V, 30 mA, 10 W, 1 V, TO-220FPAB, 80 A
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 500 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.00065 ohm, 10 V, 2 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 6 A, 525 V, 0.95 ohm, 10 V, 3.75 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, NPN, 80 V, 130 MHz, 1.5 W, 1 A, 63 hFE
(EN)
LITTELFUSE
三端双向可控硅, 600 V, 75 mA, 20 W, 2.5 V, TO-220AB, 100 A
(EN)MICROCHIP
晶体管, MOSFET, N沟道, 13 mA, 500 V, 850 ohm, 0 V
NEXPERIA
单晶体管 双极, 达林顿, NPN, 45 V, 200 MHz, 1.25 W, 1 A, 2000 hFE
(EN)
