规格：MSL MSL 1 -无限制,
ROHM
单晶体管 双极, 高速, NPN, 30 V, 320 MHz, 500 mW, 1 A, 270 hFE
(EN)
ON SEMICONDUCTOR
单晶体管 双极, PNP, -80 V, 50 MHz, 1.5 W, -1.5 A, 63 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 33 A, 100 V, 0.044 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -12 A, -20 V, 0.025 ohm, -4.5 V, -400 mV
(EN)
VISHAY
晶体管, MOSFET, P沟道, -50 A, -40 V, 0.012 ohm, -10 V, -1 V
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 15 A, 60 V, 0.0125 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 4.5 A, 600 V, 2 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 5.4 A, 100 V, 39 mohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 40 V, 0.00117 ohm, 10 V, 1.7 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 640 mA, 30 V, 0.41 ohm, 10 V, 1 V
(EN)
BROADCOM LIMITED
晶体管, 射频FET, 硅, 3 V, 500 mA, 500 mW, 450 MHz, 6 GHz, SOT-343
(EN)
INFINEON
晶体管, MOSFET, N沟道, 60 A, 55 V, 0.011 ohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -1.13 A, -30 V, 0.155 ohm, -10 V, -3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 6 A, 900 V, 1.93 ohm, 10 V, 5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 120 A, 80 V, 0.0017 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 11 A, 650 V, 0.199 ohm, 10 V, 3.5 V
(EN)
ROHM
单晶体管 双极, NPN, 32 V, 250 MHz, 200 mW, 500 mA, 120 hFE
(EN)
NEXPERIA
单晶体管 双极, PNP, -250 V, 60 MHz, 1.2 W, -100 mA, 50 hFE
(EN)
DIODES INC.
单晶体管 双极, 达林顿, NPN, 60 V, 170 MHz, 1 W, 500 mA, 10000 hFE
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 120 A, 60 V, 0.0018 ohm, 10 V, 3.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 6.4 A, 30 V, 35 mohm, 10 V, 4 V
(EN)
DIODES INC.
单晶体管 双极, 达林顿, NPN, 60 V, 1 W, 800 mA, 10000 hFE
(EN)
VISHAY
晶体管, MOSFET, N沟道, 20 A, 500 V, 0.2 ohm, 10 V, 2 V
(EN)NEXPERIA
单晶体管 双极, PNP, 20 V, 300 mW, 2 A, 225 hFE
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 32 A, 30 V, 0.017 ohm, 10 V, 1.7 V
(EN)
