规格：MSL MSL 1 -无限制,
NEXPERIA
晶体管, MOSFET, N沟道, 75 A, 55 V, 8 mohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 62 A, 200 V, 26 mohm, 10 V, 5 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0078 ohm, 10 V, 1.9 V
(EN)
STMICROELECTRONICS
三端双向可控硅, 600 V, 10 mA, 1 W, 1.3 V, TO-252, 30 A
(EN)
ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, NPN, 50 V, 330 MHz, 15 W, 8 A, 200 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 120 A, 60 V, 0.0018 ohm, 10 V, 2.8 V
ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, PNP, -100 V, 3 MHz, 20 W, -6 A, 15 hFE
(EN)
ROHM
晶体管 双极预偏置/数字, NPN和PNP执行, 50 V, 100 mA, 47 kohm, 47 kohm
(EN)
INFINEON
晶体管, MOSFET, P沟道, -20 A, -55 V, 0.093 ohm, -10 V, -1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 7.3 A, 100 V, 22 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 120 V, 0.0041 ohm, 10 V, 3 V
(EN)
ROHM
单晶体管 双极, PNP, -120 V, 140 MHz, 200 mW, -50 mA, 180 hFE
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 23 A, 600 V, 0.132 ohm, 10 V
(EN)
NEXPERIA
单晶体管 双极, PNP, 60 V, 145 MHz, 500 mW, 1 A, 100 hFE
(EN)
NEXPERIA
单晶体管 双极, NPN, 100 V, 100 MHz, 2 W, 1 A, 150 hFE
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 29 A, 600 V, 0.097 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 110 A, 100 V, 0.0034 ohm, 4.5 V, 2.5 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 43 A, 100 V, 15 mohm, 10 V, 3 V
(EN)
ROHM
单晶体管 双极, NPN, 18 V, 1.5 GHz, 150 mW, 20 mA, 56 hFE
(EN)
NEXPERIA
单晶体管 双极, PNP, -60 V, 100 MHz, 1.3 W, -1 A, 100 hFE
(EN)
NEXPERIA
晶体管 双极预偏置/数字, BRT, 双路 PNP, 50 V, -100 mA, 10 kohm, 10 kohm
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -7.8 A, -20 V, 0.019 ohm, -5 V, -500 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 7 A, 20 V, 0.019 ohm, 4.5 V, 700 mV
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 5.4 A, 20 V, 40 mohm, 4.5 V, 700 mV
(EN)
