规格：MSL MSL 1 -无限制,
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -3.6 A, -20 V, 0.04 ohm, -4.5 V, -500 mV
(EN)
DIODES INC.
单晶体管 双极, PNP, 70 V, 160 MHz, 2 W, 2 A, 300 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 320 A, 40 V, 1.6 mohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 14 A, 250 V, 0.28 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 42 A, 40 V, 5.5 mohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 37 A, 30 V, 0.0099 ohm, 10 V, 1.57 V
(EN)
ROHM
单晶体管 双极, PNP, -30 V, 320 MHz, 500 mW, -1 A, 270 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 195 A, 40 V, 0.0015 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 25 A, 55 V, 45 mohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管 双极预偏置/数字, BRT, 单路PNP, 50 V, -500 mA, 2.2 kohm, 10 kohm
(EN)
DIODES INC.
双路场效应管, MOSFET, 双N沟道, 200 mA, 50 V, 3.5 ohm, 10 V, 1.2 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 50 A, 60 V, 22 mohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -8.9 A, -150 V, 0.245 ohm, -10 V, -2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 240 A, 60 V, 1500 μohm, 10 V, 2 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 47 A, 600 V, 0.053 ohm, 10 V, 2.5 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 16 A, 60 V, 0.07 ohm, 10 V, 1 V
(EN)
NEXPERIA
晶体管 双极预偏置/数字, BRT, 单路PNP, 50 V, -100 mA, 4.7 kohm, 47 kohm
(EN)
DIODES INC.
单晶体管 双极, PNP, -45 V, 200 MHz, 300 mW, -100 mA, 600 hFE
(EN)MULTICOMP
单晶体管 双极, PNP, -45 V, 125 MHz, 500 mW, -1 A, 250 hFE
(EN)STMICROELECTRONICS
单晶体管 双极, 通用, NPN, 300 V, 50 MHz, 350 mW, 500 mA, 40 hFE
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 6.5 A, 600 V, 0.63 ohm, 10 V, 3 V
(EN)
ROHM
单晶体管 双极, PNP, -32 V, 100 MHz, 500 mW, -2 A, 82 hFE
(EN)
NEXPERIA
单晶体管 双极, PNP, -20 V, 140 MHz, 420 mW, -2 A, 40 hFE
(EN)
