规格：MSL MSL 1 -无限制,
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 9 A, 650 V, 0.43 ohm, 10 V, 3 V
(EN)
DIODES INC.
单晶体管 双极, PNP, 100 V, 150 MHz, 500 mW, -1 A, 100 hFE
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 3.8 A, 60 V, 140 mohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 45 V, 200 MHz, 1 W, 800 mA, 1000 hFE
(EN)
DIODES INC.
双路场效应管, MOSFET, AEC-Q101, 双P沟道, -1.03 A, -20 V, 0.5 ohm, -4.5 V, -1 V
(EN)
INFINEON
单晶体管, IGBT, 60 A, 1.65 V, 349 W, 1.35 kV, TO-247, 3 引脚
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0053 ohm, 10 V, 2.7 V
(EN)
LITTELFUSE
Triac, 800 V, 30 A, TO-220AB, 35 mA, 1.3 V
(EN)
WOLFSPEED
Silicon Carbide Power MOSFET, N Channel, 22 A, 1 kV, 0.12 ohm, 15 V, 2.1 V
(EN)
INFINEON
单晶体管, IGBT, 48 A, 1.6 V, 250 W, 600 V, TO-263, 2 引脚
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 160 A, 1.55 V, 454 W, 1.2 kV, TO-247, 3 引脚
(EN)
VISHAY
晶体管, MOSFET, N沟道, 5.6 A, 60 V, 0.021 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 21 A, 600 V, 0.13 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, PNP, -140 V, 10 MHz, 120 W, -12 A, 35 hFE
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 5.8 A, 30 V, 33 mohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 30.5 A, 30 V, 0.0032 ohm, 10 V, 1.2 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 151 A, 60 V, 0.0027 ohm, 10 V, 2.8 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, 通用, NPN, 400 V, 10 MHz, 1.56 W, 1 A, 30 hFE
(EN)
ON SEMICONDUCTOR
MOSFET Transistor, P Channel, -18.5 A, -60 V, 0.12 ohm, -5 V, -1.5 V
(EN)
DIODES INC.
双路场效应管, MOSFET, N和P沟道, 5.5 A, 30 V, 0.028 ohm, 10 V, 1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 14 A, 30 V, 8.7 mohm, 10 V, 1.8 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 4 A, 20 V, 0.025 ohm, 4.5 V, 300 mV
(EN)MULTICOMP
单晶体管 双极, NPN, 80 V, 500 mW, 1 A, 250 hFE
(EN)
DIODES INC.
单晶体管 双极, NPN, 40 V, 105 MHz, 1.2 W, 500 mA, 220 hFE
(EN)
