规格：MSL MSL 1 -无限制,
VISHAY
晶体管, MOSFET, P沟道, -16.7 A, -100 V, 0.115 ohm, -10 V
(EN)
DIODES INC.
单晶体管 双极, PNP, 40 V, 100 MHz, 600 mW, 100 mA, 300 hFE
(EN)DIODES INC.
单晶体管 双极, PNP, -70 V, 200 MHz, 625 mW, -1.5 A, 300 hFE
(EN)
INFINEON
晶体管, MOSFET, P沟道, -9.2 A, -30 V, 15.6 mohm, -10 V, -1.8 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -2.6 A, -60 V, 0.145 ohm, -10 V, -4 V
(EN)
NEXPERIA
单晶体管 双极, NPN, 30 V, 135 MHz, 480 mW, 3.5 A, 500 hFE
(EN)
ROHM
晶体管, MOSFET, N沟道, 39 A, 40 V, 0.005 ohm, 10 V, 2.5 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 54.9 A, 850 V, 0.077 ohm, 10 V, 3 V
STMICROELECTRONICS
三端双向可控硅, 800 V, 50 mA, 1 W, 1.3 V, TOP-3, 400 A
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 62 A, 200 V, 22.9 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 45 A, 75 V, 0.0176 ohm, 10 V, 2 V
(EN)
MICROCHIP
晶体管, MOSFET, N沟道, 200 mA, 450 V, 20 ohm, 0 V
ROHM
晶体管 双极预偏置/数字, PNP, 单路PNP, -50 V, -100 mA, 22 kohm, 47 kohm, 0.47 电阻比率
(EN)INFINEON
晶体管, MOSFET, N沟道, 195 A, 40 V, 0.0014 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, PNP, -100 V, 3 MHz, 65 W, -6 A, 15 hFE
(EN)INFINEON
晶体管, MOSFET, N沟道, 195 A, 75 V, 0.0025 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 75 A, 40 V, 0.0025 ohm, 10 V, 2.7 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, PNP, -250 V, 4 MHz, 200 W, -16 A, 8 hFE
(EN)INFINEON
晶体管, MOSFET, P沟道, 5.3 A, -20 V, 60 mohm, -10 V, -2.5 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 200 mA, 20 V, 0.28 ohm, 4.5 V, 700 mV
(EN)
ROHM
晶体管, MOSFET, N沟道, 200 mA, 20 V, 0.8 ohm, 2.5 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 58 A, 100 V, 0.011 ohm, 10 V, 2.7 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 40 A, 100 V, 0.023 ohm, 10 V, 3 V
(EN)
NEXPERIA
单晶体管 双极, NPN, 60 V, 130 MHz, 600 mW, 4.7 A, 75 hFE
(EN)
