规格：MSL MSL 1 -无限制,
ROHM
功率场效应管, MOSFET, N沟道, 11 A, 600 V, 0.34 ohm, 10 V, 5 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -7 A, -30 V, 0.012 ohm, -10 V, -2.5 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -3 A, -30 V, 0.055 ohm, -10 V, -2.5 V
(EN)ROHM
晶体管, MOSFET, P沟道, -3 A, -30 V, 0.055 ohm, -10 V, -2.5 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -3 A, -30 V, 0.055 ohm, -10 V, -2.5 V
(EN)ROHM
晶体管, MOSFET, N沟道, 5 A, 20 V, 0.022 ohm, 4.5 V, 1 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 200 mA, 50 V, 1.6 ohm, 4.5 V, 800 mV
(EN)
ROHM
晶体管, MOSFET, P沟道, -2.5 A, -12 V, 0.044 ohm, -4.5 V, -300 mV
(EN)
VISHAY
晶体管, MOSFET, N沟道, 10.9 A, 30 V, 20 mohm, 10 V, 1 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 4.5 A, 30 V, 0.02 ohm, 10 V, 2.2 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 47 A, 600 V, 0.053 ohm, 10 V, 2.5 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 37 A, 200 V, 28 mohm, 10 V, 3 V
(EN)
ROHM
双路场效应管, MOSFET, 双P沟道, -2.5 A, -30 V, 0.06 ohm, -10 V, -2.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 56 A, 60 V, 7.1 mohm, 20 V, 4 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, 通用, PNP, -45 V, 100 MHz, 300 mW, -500 mA, 100 hFE
(EN)ROHM
晶体管 双极预偏置/数字, PNP, 单路PNP, -50 V, -100 mA, 2.2 kohm, 47 kohm, 0.047 电阻比率
(EN)
INFINEON
晶体管, MOSFET, N沟道, 600 mA, 200 V, 2.2 ohm, 10 V, 5.5 V
(EN)
ROHM
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.19 ohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 45 V, 125 MHz, 350 mW, 200 mA, 100 hFE
(EN)
ROHM
Silicon Carbide Power MOSFET, N Channel, 4 A, 1.7 kV, 1.15 ohm, 18 V, 2.8 V
(EN)NEXPERIA
晶体管 双极预偏置/数字, BRT, 单路PNP, 50 V, -100 mA, 47 kohm, 22 kohm
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 680 mA, 25 V, 450 mohm, 4.5 V, 800 mV
(EN)ROHM
功率场效应管, MOSFET, N沟道, 5 A, 800 V, 1.6 ohm, 10 V, 5 V
(EN)ROHM
晶体管, MOSFET, N沟道, 33 A, 250 V, 0.077 ohm, 10 V, 5 V
(EN)ROHM
晶体管, MOSFET, N沟道, 55 A, 100 V, 0.012 ohm, 10 V, 2.5 V
(EN)
