规格：MSL MSL 1 -无限制,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 500 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 200 A, 40 V, 0.001 ohm, 4.5 V, 2.5 V
(EN)
NEXPERIA
晶体管 双极预偏置/数字, BRT, 单路PNP, 50 V, -100 mA, 22 kohm, 47 kohm
(EN)
STMICROELECTRONICS
晶闸管, 800 V, 50 mA, 50 A, 80 A, TO-247, 3 引脚
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 14 A, 30 V, 7.5 mohm, 10 V, 1.7 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 6.9 A, 30 V, 27 mohm, 10 V, 1.9 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 58 A, 100 V, 0.0107 ohm, 10 V, 2.7 V
(EN)
NEXPERIA
晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 10 kohm, 47 kohm, 4.7 电阻比率
(EN)
NEXPERIA
单晶体管 双极, 通用, NPN, 45 V, 100 MHz, 250 mW, 500 mA, 250 hFE
(EN)
DIODES INC.
单晶体管 双极, NPN, 70 V, 150 MHz, 2 W, 2 A, 500 hFE
(EN)
ROHM
单晶体管 双极, NPN, 50 V, 360 MHz, 500 mW, 1 A, 180 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 89 A, 55 V, 0.01 ohm, 10 V, 1 V
(EN)ROHM
晶体管 双极预偏置/数字, PNP, 单路PNP, -50 V, -100 mA, 2.2 kohm, 10 kohm, 0.22 电阻比率
(EN)
INFINEON
晶体管, MOSFET, N沟道, 32 A, 100 V, 0.036 ohm, 10 V, 4 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 62 A, 150 V, 0.04 ohm, 10 V, 5.5 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 80 A, 30 V, 0.002 ohm, 10 V, 2.5 V
(EN)NEXPERIA
晶体管 双极预偏置/数字, BRT, 单路PNP, 50 V, -100 mA, 2.2 kohm, 2.2 kohm
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 75 A, 80 V, 0.0082 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 6.9 A, 100 V, 26 mohm, 10 V, 5.5 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 80 V, 0.0059 ohm, 10 V, 3 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 10 A, 190 V, 0.13 ohm, 10 V, 2.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 150 mohm, 10 V, 5 V
(EN)NEXPERIA
单晶体管 双极, 开关, PNP, -40 V, 250 MHz, 250 mW, -200 mA, 100 hFE
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 915 mA, 26 V, 0.127 ohm, 4.5 V, 760 mV
(EN)
VISHAY
晶体管, MOSFET, N沟道, 50 A, 20 V, 0.0033 ohm, 10 V, 2 V
(EN)
