规格：MSL MSL 1 -无限制,
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 60 A, 60 V, 16 mohm, 5 V, 1 V
(EN)
ROHM
二极管, 射频/PIN, 单, 2 ohm, 60 V, SOD-523, 2引脚, 0.45 pF
(EN)
THAT CORPORATION
双极晶体管阵列, 低噪, NPN, PNP, 40 V, 20 mA, 100 hFE, SOIC
(EN)INFINEON
晶体管, MOSFET, N沟道, 59 A, 100 V, 25 mohm, 10 V, 5.5 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 33 A, 600 V, 0.083 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0071 ohm, 10 V, 2 V
(EN)
NEXPERIA
单晶体管 双极, NPN, 45 V, 100 MHz, 150 mW, 100 mA, 110 hFE
(EN)
NEXPERIA
晶体管 双极预偏置/数字, BRT, 单路PNP, 50 V, -100 mA, 4.7 kohm, 4.7 kohm
(EN)
ROHM
双路场效应管, MOSFET, N和P沟道, 9 A, 30 V, 0.0123 ohm, 10 V, 2.5 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -2 A, -12 V, 0.075 ohm, -4.5 V, -1 V
(EN)
NEXPERIA
单晶体管 双极, PNP, -20 V, 140 MHz, 650 mW, -2 A, 85 hFE
(EN)
NXP
晶体管 双极-射频, NPN, 4.5 V, 18 GHz, 600 mW, 500 mA, 40 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 32 A, 100 V, 0.032 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR
单晶体管 双极, AEC-Q100, NPN, 350 V, 90 MHz, 45 W, 4 A, 300 hFE
(EN)VISHAY
晶体管, MOSFET, N沟道, 110 A, 40 V, 1.7 mohm, 10 V, 1.2 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 640 mA, 100 V, 1 ohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管 双极预偏置/数字, BRT, 双路 NPN, 50 V, 100 mA, 22 kohm, 22 kohm
(EN)
ROHM
功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.115 ohm, 10 V, 4 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -3 A, -30 V, 0.055 ohm, -10 V, -2.5 V
(EN)NEXPERIA
晶体管 双极预偏置/数字, NPN和PNP执行, 50 V, 100 mA, 4.7 kohm
(EN)
NEXPERIA
晶体管 双极预偏置/数字, BRT, 单路PNP, -50 V, -500 mA, 1 kohm, 10 kohm
(EN)NEXPERIA
单晶体管 双极, 通用, PNP, -45 V, 80 MHz, 250 mW, -500 mA, 160 hFE
(EN)
ROHM
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.17 ohm, 10 V, 4 V
(EN)ROHM
晶体管, MOSFET, P沟道, -200 mA, -20 V, 0.8 ohm, -4.5 V, -1 V
(EN)
ROHM
功率场效应管, MOSFET, N沟道, 35 A, 1.2 kV, 0.08 ohm, 18 V, 4 V
(EN)
