规格：MSL MSL 1 -无限制,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -2.6 A, -20 V, 0.073 ohm, -4.5 V, -700 mV
(EN)
IXYS SEMICONDUCTOR
单晶体管, IGBT, 75 A, 2.5 V, 350 W, 1.7 kV, TO-247AD, 3 引脚
(EN)
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, BRT, NPN和PNP执行, 50 V, 100 mA, 10 kohm, 10 kohm, 1 电阻比率
NEXPERIA
晶体管 双极预偏置/数字, BRT, NPN和PNP执行, 50 V, 100 mA, 10 kohm
(EN)
MULTICOMP
单晶体管 双极, PNP, -60 V, 125 MHz, 500 mW, -1 A, 250 hFE
(EN)DIODES INC.
单晶体管 双极, NPN, 15 V, 150 MHz, 2 W, 4 A, 500 hFE
(EN)
NEXPERIA
单晶体管 双极, NPN, 50 V, 250 MHz, 250 mW, 200 mA, 210 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 42 A, 75 V, 0.0128 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 4 A, 60 V, 0.07 ohm, 10 V, 1.6 V
(EN)
ROHM
功率场效应管, MOSFET, N沟道, 55 A, 1.2 kV, 0.04 ohm, 18 V, 5.6 V
(EN)NEXPERIA
单晶体管 双极, 开关, NPN, 40 V, 250 mW, 800 mA, 40 hFE
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 228 A, 55 V, 0.0023 ohm, 10 V, 2.3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 9 A, 30 V, 0.014 ohm, 10 V, 2.1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 170 A, 40 V, 3.6 mohm, 10 V, 4 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, Q3-Class, N沟道, 100 A, 500 V, 0.049 ohm, 10 V, 6.5 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, Q-Class, N沟道, 27 A, 800 V, 0.32 ohm, 10 V, 4.5 V
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 630 mA, 20 V, 0.29 ohm, 4.5 V, 920 mV
(EN)
NEXPERIA
晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 4.7 kohm, 47 kohm, 0.1 电阻比率
(EN)
ROHM
晶体管, MOSFET, N沟道, 2.5 A, 30 V, 0.048 ohm, 4.5 V, 1.5 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 32.4 A, 650 V, 0.09 ohm, 10 V, 4 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 31.6 A, 650 V, 0.095 ohm, 10 V, 4 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 87 A, 650 V, 0.025 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, 通用, NPN, 65 V, 100 MHz, 300 mW, 100 mA, 200 hFE
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 170 mA, 100 V, 6 ohm, 10 VDC, 0.8 V
(EN)NEXPERIA
单晶体管 双极, 通用, NPN, 45 V, 100 MHz, 250 mW, 500 mA, 100 hFE
(EN)
