规格：MSL MSL 1 -无限制,
NEXPERIA
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0126 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管 双极预偏置/数字, BRT, 双路 PNP, -50 V, -100 mA, 10 kohm, 10 kohm
(EN)NEXPERIA
晶体管 双极预偏置/数字, BRT, NPN和PNP执行, 50 V, 100 mA, 2.2 kohm, 47 kohm
(EN)
VISHAY
晶体管, MOSFET, P沟道, -1.4 A, -150 V, 0.61 ohm, -10 V, -4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 8 A, 60 V, 0.05 ohm, 10 V, 2 V
(EN)
DIODES INC.
双路场效应管, MOSFET, 增强模式, N和P沟道, 3.1 A, 30 V, 0.12 ohm, 10 V, -1 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 360 mA, 60 V, 1 ohm, 10 V, 1.75 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 3 A, -60 V, 0.082 ohm, -10 V, -1.6 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, 通用, PNP, -80 V, 50 MHz, 1.5 W, -1.5 A, 100 hFE
(EN)
VISHAY
晶体管, MOSFET, N沟道, 6 A, 30 V, 0.023 ohm, 10 V, 2.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 21.4 A, 60 V, 0.025 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR
单晶体管 双极, 通用, NPN, 30 V, 250 MHz, 225 mW, 600 mA, 35 hFE
(EN)ON SEMICONDUCTOR
单晶体管 双极, 通用, NPN, 30 V, 100 MHz, 300 mW, 100 mA, 420 hFE
(EN)
TEXAS INSTRUMENTS
双极晶体管阵列, NPN, 50 V, 350 mA, SOIC
(EN)ON SEMICONDUCTOR
单晶体管 双极, 通用, PNP, -40 V, 250 MHz, 225 mW, -200 mA, 30 hFE
(EN)
NEXPERIA
单晶体管 双极, PNP, -45 V, 145 MHz, 500 mW, -1 A, 63 hFE
(EN)NEXPERIA
晶体管 双极预偏置/数字, 双路 NPN, 50 V, 100 mA, 47 kohm, 47 kohm
(EN)
NEXPERIA
单晶体管 双极, 通用, PNP, -65 V, 100 MHz, 200 mW, -100 mA, 220 hFE
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 150 mA, 100 V, 3.5 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 1.5 A, -30 V, 200 mohm, -10 V, -1.9 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 12 A, 30 V, 0.017 ohm, 10 V, 2.8 V
(EN)ON SEMICONDUCTOR
晶体管 双极-射频, NPN, PNP, 45 V, 100 MHz, 380 mW, 100 mA, 150 hFE
(EN)
NEXPERIA
单晶体管 双极, PNP, -60 V, 145 MHz, 500 mW, -1 A, 40 hFE
(EN)
