规格：MSL MSL 1 -无限制,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -15 A, -60 V, 100 mohm, -10 V, -1.6 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 15 A, 30 V, 0.0049 ohm, 10 V, 1.2 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 6 A, 40 V, 0.021 ohm, 10 V, 1.9 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -120 mA, -25 V, 7.9 ohm, -4.5 V, -1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 1.7 A, 100 V, 275 mohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 3.7 A, 55 V, 45 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 190 A, 100 V, 3.3 mohm, 20 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 3.4 A, 30 V, 0.046 ohm, 4.5 V, 800 mV
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 102 A, 650 V, 0.03 ohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, NPN, 15 V, 300 mW, 200 mA, 40 hFE
(EN)
ON SEMICONDUCTOR
单晶体管 双极, NPN, 30 V, 100 MHz, 310 mW, 1 A, 300 hFE
(EN)ON SEMICONDUCTOR
单晶体管 双极, 通用, NPN, 45 V, 700 MHz, 225 mW, 200 mA, 500 hFE
(EN)ON SEMICONDUCTOR
晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 10 kohm, 10 kohm, 1 电阻比率
(EN)
NEXPERIA
单晶体管 双极, PNP, -30 V, 160 MHz, 390 mW, -2.4 A, 320 hFE
(EN)
NEXPERIA
单晶体管 双极, PNP, -100 V, 100 MHz, 550 mW, -1 A, 150 hFE
(EN)
NEXPERIA
晶体管 双极预偏置/数字, BRT, NPN和PNP执行, 50 V, 100 mA, 47 kohm, 47 kohm
(EN)
VISHAY
晶体管, MOSFET, P沟道, -2.2 A, -200 V, 145 mohm, -10 V, -4 V
(EN)
TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, TSSOP
(EN)
ROHM
晶体管 双极预偏置/数字, 数字式, 单路NPN, 50 V, 500 mA, 1 kohm, 1 kohm
(EN)
NEXPERIA
晶体管 双极预偏置/数字, 单路PNP, -40 V, -800 mA, 1 kohm, 10 kohm
(EN)ON SEMICONDUCTOR
晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 4.7 kohm, 47 kohm, 0.1 电阻比率
(EN)NEXPERIA
单晶体管 双极, 通用, NPN, 65 V, 100 MHz, 250 mW, 100 mA, 110 hFE
(EN)ON SEMICONDUCTOR
单晶体管 双极, 达林顿, NPN, 100 V, 4 MHz, 20 W, 8 A, 1000 hFE
(EN)NEXPERIA
单晶体管 双极, NPN, 300 V, 60 MHz, 250 mW, 50 mA, 50 hFE
(EN)
