规格：MSL MSL 1 -无限制,
NEXPERIA
晶体管, MOSFET, 沟槽式, P沟道, -6.2 A, -12 V, 0.019 ohm, -4.5 V, -600 mV
(EN)
NEXPERIA
晶体管 双极预偏置/数字, BRT, 双路 NPN, 50 V, 100 mA, 4.7 kohm
(EN)
INFINEON
晶体管, MOSFET, N沟道, 40 A, 25 V, 0.0015 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, AEC-Q101, N沟道, 108 A, 40 V, 0.0025 ohm, 10 V, 3 V
(EN)
NEXPERIA
单晶体管 双极, AEC-Q101, PNP, -60 V, 150 MHz, 325 mW, -1.7 A, 30 hFE
(EN)
NEXPERIA
晶体管 双极预偏置/数字, AEC-Q101, NPN和PNP执行, 50 V, 100 mA, 47 kohm, 47 kohm, 1 电阻比率
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 9 A, 30 V, 0.0132 ohm, 10 V, 1.7 V
(EN)INFINEON
双路场效应管, MOSFET, 双P沟道, -9.2 A, -12 V, 0.017 ohm, -4.5 V, -0.9 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 27 A, 150 V, 0.0455 ohm, 10 V, 5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 79 A, 30 V, 0.0038 ohm, 10 V, 1.8 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 82 A, 30 V, 0.0041 ohm, 10 V, 1.8 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 44 A, 30 V, 0.0072 ohm, 10 V, 1.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 23 A, 30 V, 0.045 ohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, 双路 NPN, 50 V, 100 mA, 10 kohm
(EN)
NEXPERIA
双路场效应管, MOSFET, 双P沟道, -500 mA, -20 V, 1.02 ohm, -4.5 V, -700 mV
(EN)INFINEON
双路场效应管, MOSFET, AEC-Q101, 双N沟道, 6.9 A, 30 V, 0.023 ohm, 10 V, 3 V
(EN)INFINEON
双路场效应管, MOSFET, 双P沟道, -2.3 A, -30 V, 0.165 ohm, -10 V, -1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 192 A, 30 V, 0.0013 ohm, 10 V, 1.7 V
(EN)NEXPERIA
单晶体管 双极, NPN, 60 V, 180 MHz, 325 mW, 2 A, 40 hFE
(EN)NEXPERIA
晶体管 双极预偏置/数字, BRT, NPN和PNP执行, 50 V, 100 mA, 4.7 kohm
(EN)NEXPERIA
单晶体管 双极, AEC-Q101, PNP, -30 V, 170 MHz, 325 mW, -1 A, 130 hFE
(EN)NEXPERIA
单晶体管 双极, NPN, 60 V, 180 MHz, 325 mW, 1 A, 85 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 195 A, 40 V, 0.00125 ohm, 10 V, 3 V
(EN)
