规格：MSL MSL 1 -无限制,
ON SEMICONDUCTOR
单晶体管 双极, NPN, 20 V, 350 MHz, 255 mW, 1 A, 100 hFE
(EN)
ROHM
晶体管, MOSFET, AEC-Q101, N沟道, 300 mA, 60 V, 0.7 ohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR
二极管, 射频/PIN, 双系列, 4.5 ohm, 50 V, SOT-23, 3引脚, 0.23 pF
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3.5 A, -12 V, 0.054 ohm, -4.5 V, -1.4 V
(EN)
ROHM
晶体管 双极预偏置/数字, 单路PNP, -50 V, -100 mA, 10 kohm
(EN)ROHM
晶体管 双极预偏置/数字, 单路PNP, -50 V, -500 mA, 4.7 kohm, 4.7 kohm, 1 电阻比率
(EN)
INFINEON
晶体管, MOSFET, N沟道, 50 A, 30 V, 0.0025 ohm, 10 V, 1.8 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -2 A, -12 V, 0.152 ohm, -4.5 V, -900 mV
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -1.5 A, -20 V, 0.205 ohm, -4.5 V, -1.4 V
(EN)
ON SEMICONDUCTOR
双极晶体管阵列, 双NPN, 60 V, 2.27 W, 1 A, 35 hFE, WDFN
(EN)
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, 双路 NPN, 50 V, 100 mA, 2.2 kohm, 47 kohm, 0.047 电阻比率
(EN)
VISHAY
晶体管, MOSFET, N沟道, 16 A, 20 V, 0.026 ohm, 4.5 V, 400 mV
(EN)ROHM
晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 1 kohm, 10 kohm, 0.1 电阻比率
(EN)
NEXPERIA
晶体管, MOSFET, 沟槽式, P沟道, -3.7 A, -20 V, 0.05 ohm, -4.5 V, -650 mV
(EN)
VISHAY
晶体管, MOSFET, N沟道, 60 A, 80 V, 0.0063 ohm, 10 V, 3 V
(EN)
NEXPERIA
双路场效应管, MOSFET, AEC-Q101, 双PNP
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 11.1 A, 600 V, 0.27 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 11.7 A, 30 V, 0.0062 ohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 49 A, 25 V, 0.00095 ohm, 10 V, 1.6 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, NPN, 25 V, 650 MHz, 300 mW, 60 hFE
(EN)
INFINEON
晶体管 双极-射频, NPN, 2.25 V, 85 GHz, 75 mW, 35 mA, 150 hFE
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 9.6 A, 30 V, 0.014 ohm, 4.5 V, 1.2 V
(EN)NEXPERIA
单晶体管 双极, NPN, PNP, 30 V, 165 MHz, 2 W, 1 A, 180 hFE
(EN)
VISHAY
晶体管, MOSFET, P沟道, 5.6 A, -8 V, 42 mohm, -4.5 V, -1 V
(EN)
