规格：MSL MSL 1 -无限制,
VISHAY
晶体管, MOSFET, N沟道, 16 A, 8 V, 0.019 ohm, 4.5 V, 350 mV
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 8 A, 60 V, 0.03 ohm, 10 V, 2 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 40 A, 30 V, 0.0059 ohm, 10 V, 1.2 V
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 7 A, 20 V, 0.024 ohm, 4.5 V, 900 mV
(EN)
NEXPERIA
晶体管 双极预偏置/数字, BRT, 单路PNP, -50 V, -100 mA, 2.2 kohm, 47 kohm
(EN)
INFINEON
晶体管, MOSFET, N沟道, 21 A, 60 V, 0.0035 ohm, 10 V, 4 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.0038 ohm, 8 V, 850 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 14 A, 30 V, 0.0063 ohm, 10 V, 1.6 V
(EN)
NEXPERIA
单晶体管 双极, PNP, -50 V, 200 MHz, 250 mW, -200 mA, 210 hFE
(EN)
VISHAY
晶体管, MOSFET, N沟道, 60 A, 20 V, 0.0015 ohm, 10 V, 2.3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 89 A, 80 V, 0.0073 ohm, 10 V, 3 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 7 A, 600 V, 0.5 ohm, 10 V, 2 V
(EN)
NEXPERIA
晶体管, MOSFET, 沟槽式, P沟道, -5.2 A, -20 V, 0.03 ohm, -4.5 V, -680 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 2.6 A, 500 V, 2.7 ohm, 13 V, 3 V
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 14.8 A, 30 V, 0.0043 ohm, 10 V, 2.2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 10.8 A, 30 V, 0.0092 ohm, 10 V, 1.9 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 16.4 A, 30 V, 0.0046 mohm, 10 V, 2.1 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 69 A, 30 V, 0.0032 ohm, 10 V, 2.1 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 300 A, 40 V, 0.00076 ohm, 10 V, 3.5 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 235 A, 40 V, 0.0011 ohm, 10 V, 3.5 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 85 A, 40 V, 0.0032 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 150 A, 40 V, 0.0016 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 4.5 A, 200 V, 0.6 ohm, 10 V, 5 V
(EN)
