规格：MSL MSL 1 -无限制,
ROHM
双极晶体管阵列, NPN, 50 V, 150 mW, 150 mA, 120 hFE, EMT
(EN)
ROHM
晶体管 双极预偏置/数字, 双路 NPN, 50 V, 100 mA, 47 kohm, 47 kohm
(EN)
ROHM
晶体管 双极预偏置/数字, 双路 NPN, 50 V, 100 mA, 47 kohm, 47 kohm
(EN)
INFINEON
晶体管, MOSFET, P沟道, -31 A, -55 V, 65 mohm, -10 V, -4 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 12 A, 500 V, 0.5 ohm, 10 V, 5.5 V
(EN)
ROHM
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.22 ohm, 10 V, 5 V
(EN)ROHM
晶体管 双极预偏置/数字, 双路, 双路 PNP, 50 V, -100 mA, 2.2 kohm, 47 kohm
(EN)ROHM
晶体管 双极预偏置/数字, 双路 PNP, 50 V, -100 mA, 2.2 kohm, 47 kohm
(EN)ROHM
晶体管 双极预偏置/数字, NPN和PNP执行, 50 V, 100 mA, 22 kohm, 22 kohm
(EN)ROHM
晶体管 双极预偏置/数字, NPN和PNP执行, 50 V, 100 mA, 10 kohm, 10 kohm
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 97 A, 25 V, 0.0039 ohm, 4.5 V, 1.1 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 28 A, 600 V, 0.26 ohm, 10 V, 5 V
(EN)ON SEMICONDUCTOR
单晶体管 双极, 通用, PNP, -100 V, 3 MHz, 15 W, -3 A, 10 hFE
(EN)
DIODES INC.
单晶体管 双极, POWERDI?5, NPN, 100 V, 130 MHz, 3.2 W, 6 A, 230 hFE
(EN)
VISHAY
晶体管, MOSFET, N沟道, 12 A, 60 V, 0.017 ohm, 10 V, 2 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 77 A, 40 V, 0.0062 ohm, 10 V, 3 V
(EN)
INFINEON
单晶体管, IGBT, N通道, 90 A, 1.7 V, 325 W, 650 V, TO-247AC, 3 引脚
(EN)INFINEON
单晶体管, IGBT, N通道, 140 A, 1.7 V, 455 W, 650 V, TO-247AD, 3 引脚
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 26 A, 1.2 kV, 0.5 ohm, 10 V, 6.5 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, Q3-Class, N沟道, 80 A, 500 V, 0.065 ohm, 10 V, 6.5 V
(EN)
IXYS SEMICONDUCTOR
单晶体管, IGBT, 164 A, 2.75 V, 1.04 kW, 1.2 kV, TO-264AA, 3 引脚
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 15 A, 600 V, 0.231 ohm, 10 V, 4 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 15 A, 650 V, 0.225 ohm, 10 V, 4 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, Q3-Class, N沟道, 18 A, 1 kV, 0.66 ohm, 10 V, 6.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 170 A, 75 V, 0.0033 ohm, 10 V, 4 V
(EN)
