规格：MSL MSL 1 -无限制,
VISHAY
晶体管, MOSFET, N沟道, 60 A, 40 V, 0.0014 ohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 56 A, 75 V, 0.00734 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 4.8 A, 30 V, 0.032 ohm, 10 V, 1.9 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 84 A, 30 V, 0.0053 ohm, 10 V, 2 V
(EN)
NEXPERIA
单晶体管 双极, NPN, 100 V, 110 MHz, 700 mW, 5.1 A, 30 hFE
(EN)
NEXPERIA
晶体管 双极预偏置/数字, BRT, 单路PNP, -50 V, -100 mA, 47 kohm, 47 kohm
(EN)
NEXPERIA
单晶体管 双极, NPN, 40 V, 180 MHz, 250 mW, 100 mA, 100 hFE
(EN)
STMICROELECTRONICS
双极晶体管阵列, 通用, NPN, PNP, 30 V, 1.6 W, 3 A, 100 hFE, SOIC
(EN)
ON SEMICONDUCTOR
单晶体管 双极, 通用, NPN, 30 V, 100 MHz, 225 mW, 100 mA, 110 hFE
(EN)
BROADCOM LIMITED
二极管, 射频/PIN, 开关, 单, 2.5 ohm, 100 V, SOT-323, 3引脚, 0.375 pF
(EN)
NEXPERIA
单晶体管 双极, PNP, 80 V, 125 MHz, 550 mW, 4 A, 300 hFE
(EN)NEXPERIA
单晶体管 双极, 开关, PNP, -40 V, 150 MHz, 250 mW, -100 mA, 60 hFE
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 5.9 A, 20 V, 31 mohm, 4.5 V, 1.8 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 4.9 A, 30 V, 0.029 ohm, 10 V, 20 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 94 A, 55 V, 7.5 mohm, 10 V, 4 V
(EN)NEXPERIA
晶体管 双极预偏置/数字, BRT, 单路PNP, -50 V, -100 mA, 10 kohm, 10 kohm
(EN)
VISHAY
晶体管, MOSFET, N沟道, 24 A, 30 V, 0.0048 ohm, 10 V, 2.2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -1.9 A, -20 V, 127 mohm, -4.5 V, -900 mV
(EN)
STMICROELECTRONICS
单晶体管 双极, PNP, -30 V, 100 MHz, 500 mW, -1.5 A, 560 hFE
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 97 A, 25 V, 3.9 mohm, 8 V, 1.1 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, 60 A, -20 V, 0.0088 ohm, -4.5 V, 850 mV
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 5.4 A, 30 V, 35 mohm, 10 V, 1.5 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 22 A, 250 V, 55 mohm, 10 V, 3 V
(EN)
