
NEXPERIA
晶体管 双极预偏置/数字, BRT, 单路PNP, -50 V, -100 mA, 10 kohm, 10 kohm, 1 电阻比率

BROADCOM LIMITED
晶体管, 射频FET, 高线性度, 7 V, 300 mA, 1 W, 50 MHz, 6 GHz, SOT-89

ON SEMICONDUCTOR
单晶体管 双极, 通用, PNP, 45 V, 300 mW, 500 mA, 100 hFE

INFINEON
晶体管, MOSFET, N沟道, 180 A, 75 V, 3.8 mohm, 10 V, 4 V

NEXPERIA
晶体管 双极预偏置/数字, NPN和PNP执行, 50 V, 100 mA, 4.7 kohm

ON SEMICONDUCTOR
单晶体管 双极, NPN, 25 V, 100 MHz, 225 mW, 500 mA, 40 hFE

NEXPERIA
晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 4.7 kohm

NEXPERIA
单晶体管 双极, 开关, PNP, -40 V, 200 MHz, 250 mW, -600 mA, 100 hFE

ROHM
晶体管 双极预偏置/数字, 双路, 双路 PNP, 50 V, -100 mA, 10 kohm, 10 kohm

NEXPERIA
晶体管 双极预偏置/数字, 单路PNP, -40 V, -800 mA, 1 kohm, 1 kohm

NEXPERIA
双极晶体管阵列, PNP, -45 V, 390 mW, -100 mA, 290 hFE, SOT-143B

NEXPERIA
单晶体管 双极, NPN, 20 V, 260 MHz, 250 mW, 30 mA, 65 hFE

ROHM
晶体管 双极预偏置/数字, 数字式, 单路NPN, 50 V, 100 mA, 4.7 kohm, 10 kohm

ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -40 A, -30 V, 0.014 ohm, -10 V, -1.8 V

ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 4.5 A, 60 V, 0.042 ohm, 10 V, 2.2 V

ON SEMICONDUCTOR
晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 4.7 kohm

NEXPERIA
单晶体管 双极, NPN, 150 V, 30 MHz, 300 mW, 1 A, 250 hFE

NEXPERIA
单晶体管 双极, 开关, NPN, 15 V, 500 MHz, 250 mW, 200 mA, 20 hFE

VISHAY
晶体管, MOSFET, P沟道, -35 A, -20 V, 0.0031 ohm, -10 V, -400 mV

ROHM
双极晶体管阵列, 双路, NPN, 50 V, 150 mW, 100 mA, 68 hFE, SOT-363

NEXPERIA
单晶体管 双极, PNP, -45 V, 70 MHz, 250 mW, -100 mA, 210 hFE

INFINEON
晶体管, MOSFET, N沟道, 75 A, 40 V, 0.0035 ohm, 10 V, 2 V

ON SEMICONDUCTOR
单晶体管 双极, PNP, -80 V, 50 MHz, 1.5 W, -1.5 A, 25 hFE

NEXPERIA
单晶体管 双极, NPN, 45 V, 250 MHz, 250 mW, 100 mA, 30 hFE

NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 60 V, 0.0019 ohm, 10 V, 3 V