规格：MSL MSL 1 -无限制,
NEXPERIA
单晶体管 双极, NPN, 20 V, 100 MHz, 300 mW, 2 A, 200 hFE
(EN)
NEXPERIA
单晶体管 双极, PNP, -40 V, 60 MHz, 550 mW, 5 A, 250 hFE
(EN)NEXPERIA
晶体管 双极预偏置/数字, BRT, 单路PNP, -50 V, -100 mA, 10 kohm, 47 kohm, 4.7 电阻比率
(EN)
NEXPERIA
晶体管 双极预偏置/数字, BRT, 单路PNP, -50 V, -100 mA, 100 kohm, 100 kohm
(EN)NEXPERIA
单晶体管 双极, NPN, 30 V, 250 MHz, 250 mW, 600 mA, 100 hFE
(EN)
STMICROELECTRONICS
双路场效应管, MOSFET, 双N沟道, 4 A, 60 V, 0.045 ohm, 10 V, 1.7 V
(EN)
NEXPERIA
晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 10 kohm
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 590 mA, 30 V, 0.55 ohm, 4.5 V, 700 mV
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -4.3 A, -20 V, 0.058 ohm, -4.5 V, -750 mV
(EN)
VISHAY
双路场效应管, MOSFET, N和P沟道, 8 A, 20 V, 0.0115 ohm, 4.5 V, 1.4 V
(EN)
DIODES INC.
晶体管 双极预偏置/数字, 单路PNP, -50 V, -100 mA, 47 kohm, 47 kohm, 1 电阻比率
(EN)DIODES INC.
晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 10 kohm, 10 kohm, 1 电阻比率
(EN)NEXPERIA
晶体管, MOSFET, P沟道, -230 mA, -50 V, 4.5 ohm, -10 V, -1.6 V
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -1.1 A, -60 V, 400 mohm, -10 V, -3 V
(EN)
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, AEC-Q100, 单路NPN, 50 V, 100 mA, 4.7 kohm, 47 kohm, 0.1 电阻比率
(EN)
ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, PNP, -45 V, 100 MHz, 150 mW, -100 mA, 420 hFE
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 1.2 A, 20 V, 0.27 ohm, 4.5 V, 700 mV
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 1.2 A, 20 V, 0.27 ohm, 4.5 V, 700 mV
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 560 mA, 30 V, 1.5 ohm, 4 V, 1.4 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, AEC-Q101, N沟道, 915 mA, 20 V, 0.127 ohm, 4.5 V, 760 mV
(EN)
VISHAY
晶体管, MOSFET, P沟道, -60 A, -20 V, 0.00125 ohm, -10 V, -1.4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 74 A, 25 V, 0.0028 ohm, 10 V, 1.6 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 330 mA, 60 V, 1.25 ohm, 10 V, 2.5 V
(EN)
