规格：MSL MSL 1 -无限制,
ON SEMICONDUCTOR
单晶体管 双极, PNP, -45 V, 100 MHz, 460 mW, -500 mA, 250 hFE
(EN)
ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, PNP, -80 V, 50 MHz, 150 mW, -500 mA, 100 hFE
(EN)
ON SEMICONDUCTOR
Dual MOSFET, N and P Complement, 250 mA, 30 V, 1 ohm, 4.5 V, 1.2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 1.37 A, -20 V, 120 mohm, -4.5 V, -640 mV
(EN)
NEXPERIA
双路场效应管, MOSFET, 沟槽式, N和P沟道, 330 mA, 60 V, 1 ohm, 10 V, 1.6 V
(EN)
NEXPERIA
晶体管 双极预偏置/数字, BRT, 双路 NPN, 50 V, 100 mA, 4.7 kohm, 47 kohm
(EN)NEXPERIA
双路场效应管, MOSFET, 双N沟道, 800 mA, 20 V, 0.29 ohm, 4.5 V, 750 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 1.6 A, -30 V, 200 mohm, -10 V, -1.9 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 500 mA, 25 V, 0.34 ohm, 4.5 V, 800 mV
(EN)
VISHAY
晶体管, MOSFET, P沟道, -110 A, -40 V, 0.0041 ohm, -10 V, -3 V
(EN)
DIODES INC.
晶体管, MOSFET, AEC-Q101, N沟道, 630 mA, 20 V, 0.3 ohm, 4.5 V, 1 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 200 mA, 240 V, 2.2 ohm, 10 V, 1.65 V
(EN)NEXPERIA
单晶体管 双极, NPN, 40 V, 300 MHz, 240 mW, 200 mA, 100 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 55 A, 80 V, 10.3 mohm, 10 V, 2.8 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 60 A, 80 V, 0.0046 ohm, 10 V, 1.2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -4 A, -20 V, 0.054 ohm, -4.5 V, -700 mV
(EN)
VISHAY
晶体管, MOSFET, N沟道, 40 A, 60 V, 0.007 ohm, 10 V
(EN)
NEXPERIA
单晶体管 双极, AEC-Q101, PNP, -60 V, 100 MHz, 250 mW, -100 mA, 220 hFE
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -3.5 A, -60 V, 0.11 ohm, -10 V, -3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 5.2 A, 30 V, 0.034 ohm, 4.5 V, 400 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -40 V, 250 MHz, 625 mW, -200 mA, 30 hFE
(EN)INFINEON
晶体管, 射频FET, -100 V, -15 A, 128 W, TO-252
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 20 A, 60 V, 0.021 ohm, 10 V, 1.7 V
(EN)
