规格：MSL MSL 1 -无限制,
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 2.1 A, 30 V, 0.08 ohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, PNP, -40 V, 160 MHz, 2 W, -3 A, 100 hFE
(EN)
ON SEMICONDUCTOR
MOSFET Transistor, P Channel, -5.7 A, -60 V, 0.037 ohm, -10 V, -3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 530 mA, 20 V, 0.35 ohm, 4.5 V, 1 V
(EN)
LITTELFUSE
Thyristor, 600 V, 200 μA, 7.6 A, 12 A, TO-252, 3 Pins
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 900 mA, 30 V, 0.39 ohm, 4.5 V, 700 mV
(EN)
VISHAY
晶体管, MOSFET, P沟道, -6 A, -8 V, 0.025 ohm, -4.5 V, -350 mV
(EN)
VISHAY
晶体管, MOSFET, N沟道, 4.3 A, 40 V, 0.042 ohm, 10 V, 1.5 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, 8.6 A, -60 V, 0.0115 ohm, -10 V, -3 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 1.6 A, 30 V, 100 mohm, 10 V, 1.7 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 13 A, 100 V, 130 mohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, NPN, 80 V, 130 MHz, 1.5 W, 1 A, 25 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 120 A, 40 V, 0.00188 ohm, 10 V, 3 V
(EN)
NEXPERIA
双路场效应管, MOSFET, N和P沟道, 800 mA, 20 V, 0.29 ohm, 4.5 V, 750 mV
(EN)ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, NPN, 40 V, 300 MHz, 1.5 W, 600 mA, 35 hFE
(EN)ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, PNP, -60 V, 200 MHz, 1.5 W, -600 mA, 50 hFE
(EN)NEXPERIA
单晶体管 双极, NPN, PNP, 40 V, 300 MHz, 360 mW, 200 mA, 100 hFE
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 540 mA, 20 V, 0.4 ohm, 4.5 V, 1 V
(EN)
INFINEON
芯片, 低噪放大器, MMIC, 30MA, 4V, TSLP7-1
(EN)LITTELFUSE
三端双向可控硅, 800 V, 35 mA, 2 W, 1.3 V, TO-252, 40 A
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 22 A, 60 V, 0.027 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 17 A, 100 V, 56.6 mohm, 10 V, 3 V
(EN)LITTELFUSE
晶闸管, 800 V, 200 μA, 7.6 A, 12 A, TO-252, 3 引脚
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, 6 A, -20 V, 0.024 ohm, -4.5 V, -800 mV
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 20 A, 30 V, 1 V
(EN)
