规格：MSL MSL 1 -无限制,
VISHAY
晶体管, MOSFET, N沟道, 34.4 A, 200 V, 0.0285 ohm, 10 V, 4 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 24.2 A, 250 V, 0.052 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 60 A, 100 V, 0.0055 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 16 A, 30 V, 0.0073 ohm, 10 V, 2.2 V
(EN)
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 10 kohm, 47 kohm, 0.21 电阻比率
(EN)
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 47 kohm, 47 kohm, 1 电阻比率
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 310 mA, 60 V, 1.19 ohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, NPN, 65 V, 100 MHz, 200 mW, 100 mA, 200 hFE
(EN)
VISHAY
晶体管, MOSFET, P沟道, -8 A, -20 V, 0.02 ohm, -4.5 V, -1 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 140 mA, 20 V, 5 ohm, 4.5 V, 700 mV
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -1.8 A, -60 V, 0.19 ohm, -10 V, -2.6 V
(EN)
LITTELFUSE
三端双向可控硅, 600 V, 5 mA, 1 W, 1.3 V, SOT-223, 8 A
(EN)
ON SEMICONDUCTOR
MOSFET Transistor, P Channel, -2.5 A, -60 V, 72 mohm, -10 V, -3 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 22 A, 12 V, 0.0075 ohm, 4.5 V, 800 mV
(EN)
NEXPERIA
单晶体管 双极, 双PNP, -65 V, 100 MHz, 200 mW, -100 mA, 200 hFE
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 10 A, 525 V, 0.41 ohm, 10 V, 3.75 V
(EN)
DIODES INC.
单晶体管 双极, 达林顿, NPN, 100 V, 140 MHz, 625 mW, 900 mA, 60000 hFE
(EN)
VISHAY
晶体管, MOSFET, N沟道, 3.2 A, 200 V, 65 mohm, 10 V, 4.5 V
(EN)
NEXPERIA
单晶体管 双极, NPN, 60 V, 175 MHz, 390 mW, 3.8 A, 500 hFE
(EN)
DIODES INC.
晶体管, MOSFET, AEC-Q101, P沟道, -460 mA, -20 V, 0.5 ohm, -4.5 V, -1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 700 mA, 20 V, 0.18 ohm, 4.5 V, 1.1 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 36.7 A, 100 V, 0.014 ohm, 10 V, 1.5 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 7 A, 30 V, 0.0215 ohm, 10 V, 3 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 200 mA, 60 V, 1.6 ohm, 4.5 V, 1.5 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, 音频, NPN, 100 V, 40 MHz, 1.4 W, 4 A, 40 hFE
(EN)
