规格：MSL MSL 1 -无限制,
INFINEON
晶体管 双极-射频, NPN, 2.5 V, 45 GHz, 125 mW, 50 mA, 70 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, 40 V, 200 MHz, 350 mW, 600 mA, 300 hFE
(EN)
ON SEMICONDUCTOR
单晶体管 双极, NPN, 50 V, 500 MHz, 700 mW, 500 mA, 300 hFE
(EN)
ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, NPN, 45 V, 100 MHz, 225 mW, 100 mA, 200 hFE
(EN)
INFINEON
晶体管, MOSFET, P沟道, -20 A, -55 V, 0.093 ohm, -10 V, -1 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -3.5 A, -20 V, 0.048 ohm, -4.5 V, -1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 540 mA, 55 V, 0.346 ohm, 10 V, 1.6 V
(EN)ON SEMICONDUCTOR
单晶体管 双极, 通用, NPN, 30 V, 100 MHz, 300 mW, 100 mA, 100 hFE
(EN)
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, AEC-Q101, 双路 NPN, 50 V, 100 mA, 10 kohm, 10 kohm, 1 电阻比率
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 10.4 A, 30 V, 0.0165 ohm, 10 V, 1.5 V
(EN)
INFINEON
二极管, 射频/PIN, 双系列, 1 ohm, 50 V, SOT-23, 3引脚, 0.3 pF
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 6 A, 40 V, 29 mohm, 10 V, 1.9 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, 31 A, -55 V, 65 mohm, -10 V, -4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 8.6 A, 30 V, 17 mohm, 10 V, 1.6 V
(EN)
TOSHIBA
晶体管, MOSFET, N沟道, 400 mA, 30 V, 700 mohm, 10 V, 1.8 V
(EN)
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, BRT, NPN和PNP执行, 50 V, 100 mA, 10 kohm, 47 kohm, 4.7 电阻比率
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 4.1 A, 20 V, 0.06 ohm, 4.5 V, 1.2 V
(EN)ON SEMICONDUCTOR
单晶体管 双极, NPN, 65 V, 100 MHz, 225 mW, 100 mA, 110 hFE
(EN)NEXPERIA
单晶体管 双极, 通用, PNP, -45 V, 80 MHz, 250 mW, -500 mA, 250 hFE
(EN)
ROHM
单晶体管 双极, NPN, 11 V, 3.2 GHz, 150 mW, 10 mA, 56 hFE
(EN)
ON SEMICONDUCTOR
Dual MOSFET, N and P Complement, 220 mA, 20 V, 0.75 ohm, 4.5 V, 1 V
(EN)
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 10 kohm, 10 kohm, 1 电阻比率
(EN)
ROHM
晶体管, MOSFET, N沟道, 2 A, 60 V, 250 mohm, 4 V, 800 mV
(EN)
