规格：MSL MSL 1 -无限制,
VISHAY
晶体管, MOSFET, P沟道, -3.6 A, -60 V, 54 mohm, -10 V, -3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0023 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 98 A, 40 V, 0.0025 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0029 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 58 A, 25 V, 0.0042 ohm, 10 V, 2 V
INFINEON
晶体管, MOSFET, N沟道, 71 A, 30 V, 4.8 mohm, 10 V, 1 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 340 mA, 240 V, 2.8 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 40 A, 60 V, 0.0034 ohm, 10 V, 2.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0035 ohm, 10 V, 1.6 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 60 A, 30 V, 0.0042 ohm, 8 V, 1.2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 20 A, 40 V, 0.0065 ohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR
Dual MOSFET, Dual N Channel, 2 A, 42 V, 0.165 ohm, 10 V, 1.8 V
(EN)
STMICROELECTRONICS
单晶体管 双极, 通用, NPN, 60 V, 150 MHz, 15 W, 3 A, 200 hFE
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 12.5 A, 100 V, 33 mohm, 10 V, 3 V
(EN)DIODES INC.
晶体管, MOSFET, 低电压, N沟道, 6.9 A, 60 V, 45 mohm, 10 V, 1 V
(EN)
STMICROELECTRONICS
三端双向可控硅, 700 V, 4 A, TO-252, 35 mA, 1.3 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -1.8 A, -60 V, 0.5 ohm, -10 V, -2 V
(EN)
NEXPERIA
单晶体管 双极, NPN, 45 V, 100 MHz, 900 mW, 500 mA, 160 hFE
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0025 ohm, 10 V, 1.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 240 A, 60 V, 0.00115 ohm, 10 V, 3.7 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 120 A, 100 V, 0.0032 ohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 100 V, 0.0041 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0023 ohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR
MOSFET Transistor, N Channel, 7.6 A, 60 V, 0.019 ohm, 10 V, 2.5 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 28.1 A, 100 V, 30.8 mohm, 10 V, 3 V
(EN)
