规格：MSL MSL 1 -无限制,
NEXPERIA
晶体管 双极预偏置/数字, BRT, 双路 NPN, 50 V, 100 mA, 10 kohm, 47 kohm, 4.7 电阻比率
(EN)
VISHAY
晶体管, MOSFET, P沟道, -2 A, -20 V, 0.05 ohm, -4.5 V, -400 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 11 A, 30 V, 12.5 mohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 220 mA, 50 V, 1.6 ohm, 5 V, 600 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 49 A, 25 V, 0.0007 ohm, 10 V, 1.6 V
(EN)
DIODES INC.
晶体管 双极预偏置/数字, 单路PNP, -50 V, -100 mA, 47 kohm, 47 kohm, 1 电阻比率
(EN)DIODES INC.
晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 10 kohm, 10 kohm, 1 电阻比率
(EN)
INFINEON
晶体管, MOSFET, N沟道, 17 A, 55 V, 0.075 ohm, 10 V, 2 V
(EN)
NEXPERIA
单晶体管 双极, PNP, -45 V, 145 MHz, 420 mW, -1 A, 100 hFE
(EN)
ON SEMICONDUCTOR
单晶体管 双极, PNP, -65 V, 100 MHz, 150 mW, -100 mA, 150 hFE
(EN)
INFINEON
双路场效应管, MOSFET, N和P, 1.5 A, 20 V, 0.108 ohm, 4.5 V, 950 mV
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 62 A, 80 V, 0.0113 ohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 3.5 A, 60 V, 0.092 ohm, 10 V
(EN)
DIODES INC.
双路场效应管, MOSFET, AEC-Q101, 双N沟道, 540 mA, 20 V, 0.4 ohm, 4.5 V, 1 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 11.7 A, 20 V, 0.0065 ohm, 4.5 V, 1 V
(EN)
DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 5.9 A, 20 V, 0.024 ohm, 4.5 V, 450 mV
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 4.6 A, 20 V, 0.027 ohm, 10 V, 600 mV
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 300 mA, 50 V, 2 ohm, 5 V, 1 V
(EN)DIODES INC.
双路场效应管, MOSFET, 双N沟道, 180 mA, 60 V, 6 ohm, 10 V, 2 V
(EN)DIODES INC.
晶体管, MOSFET, P沟道, -6.9 A, -20 V, 0.02 ohm, -4.5 V, -1 V
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -50 A, -30 V, 0.0057 ohm, -10 V, -3 V
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -70 A, -30 V, 0.0043 ohm, -10 V, -3 V
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -3.3 A, -40 V, 0.026 ohm, -10 V, -2.2 V
(EN)
