规格：MSL MSL 1 -无限制,
VISHAY
晶体管, MOSFET, N沟道, 16 A, 30 V, 0.0073 ohm, 10 V, 2.2 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -50 A, -20 V, 0.0035 ohm, -4.5 V, 900 mV
(EN)
VISHAY
晶体管, MOSFET, P沟道, -60 A, -40 V, 0.0058 ohm, -10 V, -2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 60 A, 60 V, 0.004 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, N和P, 3 A, 60 V, 0.062 ohm, 10 V, 2.6 V
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, 4 A, -30 V, 70 mohm, 10 V, -800 mV
(EN)DIODES INC.
双极晶体管阵列, 双路, NPN, PNP, 40 V, 200 mW, 600 mA, 100 hFE, SOT-363
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 50 A, 100 V, 0.0126 ohm, 10 V, 2.8 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 电源沟槽, 双N沟道, 201 A, 30 V, 0.00077 ohm, 10 V, 1.5 V
(EN)
LITTELFUSE
Thyristor, 200 V, 200 μA, 250 mA, SOT-23, 3 Pins
(EN)
NEXPERIA
单晶体管 双极, PNP, -150 V, 115 MHz, 300 mW, -1 A, 220 hFE
(EN)VISHAY
晶体管, MOSFET, N沟道, 13 A, 200 V, 0.118 ohm, 10 V, 2 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 40 A, 30 V, 0.0053 ohm, 10 V, 1.2 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -35 A, -20 V, 0.0035 ohm, -10 V, -400 mV
(EN)
DIODES INC.
单晶体管 双极, PNP, 30 V, 80 MHz, 3 W, 7 A, 200 hFE
(EN)
VISHAY
MOSFET Transistor, P Channel, -60 A, -30 V, 0.0021 ohm, -10 V, -2.3 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 30 A, 40 V, 0.0079 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 120 A, 40 V, 0.0021 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -620 mA, -60 V, 0.62 ohm, -10 V, -1.5 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 40 V, 3.2 mohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 7 A, 500 V, 0.53 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 2.7 A, 100 V, 0.0854 ohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -46 A, -40 V, 0.0083 ohm, -10 V, -2.3 V
(EN)
