规格：MSL MSL 1 -无限制,
DIODES INC.
双路场效应管, MOSFET, 双N沟道, 2 A, 20 V, 0.08 ohm, 4.5 V, 1 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.00085 ohm, 10 V, 1.41 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 700 mA, 20 V, 0.18 ohm, 4.5 V, 1.1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 16 A, 100 V, 0.0437 ohm, 10 V, 2.9 V
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 15 A, 30 V, 0.0119 ohm, 8 V, 950 mV
(EN)VISHAY
双路场效应管, MOSFET, 双N沟道, 20 A, 40 V, 0.0156 ohm, 10 V, 2.8 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 170 mA, 100 V, 6 ohm, 10 V, 2.2 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -20 A, -20 V, 0.0199 ohm, -4.5 V, -850 mV
(EN)
DIODES INC.
双路场效应管, MOSFET, AEC-Q101, N和P, 1.03 A, 20 V, 0.3 ohm, 5 V, 900 mV
(EN)
INFINEON
晶体管, MOSFET, P沟道, -430 mA, -250 V, 3 ohm, -10 V, -1.5 V
(EN)
DIODES INC.
单晶体管 双极, PNP, 60 V, 120 MHz, 3 W, -5 A, 200 hFE
(EN)VISHAY
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.00165 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
Dual MOSFET, N and P Channel, 2.6 A, 30 V, 52 mohm, 4.5 V, 900 mV
(EN)
NEXPERIA
晶体管 双极预偏置/数字, 双路 NPN, 50 V, 500 mA, 1 kohm, 10 kohm
(EN)
NEXPERIA
单晶体管 双极, PNP, -80 V, 145 MHz, 420 mW, -1 A, 63 hFE
(EN)NEXPERIA
双极晶体管阵列, NPN, 60 V, 420 mW, 1 A, 500 hFE, SOT-457
(EN)
DIODES INC.
单晶体管 双极, NPN, 20 V, 215 MHz, 1.25 W, 4.5 A, 450 hFE
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -3.6 A, -20 V, 0.048 ohm, -4.5 V, -650 mV
(EN)
VISHAY
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0022 ohm, 10 V, 1 V
(EN)
INFINEON
双路场效应管, MOSFET, P沟道, -8 A, -30 V, 0.017 ohm, -10 V, -1.8 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 600 mA, 20 V, 0.41 ohm, 4.5 V, 900 mV
(EN)NEXPERIA
单晶体管 双极, NPN, 400 V, 25 MHz, 730 mW, 1 A, 155 hFE
(EN)
VISHAY
晶体管, MOSFET, N沟道, 12 A, 8 V, 0.0078 ohm, 4.5 V, 350 mV
(EN)
