规格：MSL MSL 1 -无限制,
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 20 A, 25 V, 4.6 ohm, 4.5 V, 1.4 V
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 15 A, 30 V, 2.1 V
(EN)
DIODES INC.
双路场效应管, MOSFET, 双P沟道, -26 A, -60 V, 0.036 ohm, -10 V, -3 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 35.8 A, 30 V, 0.0011 ohm, 10 V, 3 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.00125 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 16.8 A, 60 V, 0.05 ohm, 10 V, 4 V
(EN)
INFINEON
单晶体管, IGBT, 12 A, 1.5 V, 88 W, 600 V, TO-252, 3 引脚
(EN)INFINEON
晶体管, MOSFET, N沟道, 45 A, 60 V, 0.0045 ohm, 10 V, 2.8 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 19 A, 55 V, 0.047 ohm, 10 V, 1.6 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 30 A, 55 V, 0.0106 ohm, 10 V, 1.6 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 30 A, 55 V, 0.0159 ohm, 10 V, 1.6 V
INFINEON
晶体管, MOSFET, N沟道, 50 A, 40 V, 0.0062 ohm, 10 V, 1.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 75 A, 40 V, 0.005 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 90 A, 40 V, 0.0037 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 86 A, 40 V, 0.0043 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 300 mA, 20 V, 1 ohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 163 A, 40 V, 0.0017 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 101 A, 40 V, 0.0029 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 49 A, 60 V, 0.0074 ohm, 10 V, 2.1 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 38 A, 60 V, 0.0137 ohm, 10 V, 2.1 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 17 A, 60 V, 0.0228 ohm, 10 V, 2.1 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 40 A, 40 V, 0.0116 ohm, 10 V, 2.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 2.85 A, 200 V, 65 mohm, 10 V, 2 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 1 A, 800 V, 13 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
单晶体管 双极, PNP, 30 V, 15 W, -10 A, 200 hFE
(EN)
