规格：MSL MSL 1 -无限制,
STMICROELECTRONICS
双路场效应管, MOSFET, 双N沟道, 3 A, 30 V, 0.09 ohm, 10 V, 1.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 30 A, 60 V, 0.0178 ohm, 10 V, 1.7 V
(EN)
DIODES INC.
晶体管, MOSFET, 双N沟道, 7.5 A, 40 V, 0.015 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 60 A, 100 V, 0.0098 ohm, 10 V, 1.6 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 2.6 A, 150 V, 0.185 ohm, 10 V, 5 V
(EN)
LITTELFUSE
三端双向可控硅, 600 V, 5 mA, 2 W, 1.3 V, TO-252, 40 A
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 100 V, 0.0068 ohm, 10 V, 4.5 V
(EN)
LITTELFUSE
IGBT Single Transistor, 20 A, 125 W, 440 V, TO-252, 3 Pins
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 16.1 A, 650 V, 0.23 ohm, 10 V, 3 V
(EN)DIODES INC.
双路场效应管, MOSFET, P沟道, -5.2 A, -60 V, 0.034 ohm, -10 V, -3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 2.7 A, 60 V, 0.2 ohm, 5 V, 2 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 20 A, 30 V, 9 mohm, 10 V, 1 V
(EN)ON SEMICONDUCTOR
单晶体管 双极, 达林顿, NPN, 100 V, 25 MHz, 1.75 W, 2 A, 12000 hFE
(EN)INFINEON
晶体管, MOSFET, N沟道, 37 A, 55 V, 0.027 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR
Power MOSFET, N Channel, 4.1 A, 600 V, 1.8 ohm, 10 V, 3.9 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 7 A, 35 V, 24 mohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR
单晶体管 双极, NPN, 25 V, 65 MHz, 12.5 W, 5 A, 70 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 42 A, 40 V, 0.0071 ohm, 10 V, 2 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, P沟道, 2.5 A, -60 V, 200 mohm, 10 V, 4 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 60 A, 40 V, 0.0048 ohm, 10 V, 2.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 70 A, 100 V, 0.0096 ohm, 10 V, 1.7 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 115 mA, 60 V, 13.5 ohm, 10 V, 2 V
(EN)
NEXPERIA
单晶体管 双极, AEC-Q101, PNP, -60 V, 120 MHz, 600 mW, -3 A, 80 hFE
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 30 A, 40 V, 0.0092 ohm, 10 V, 3 V
(EN)
