规格：MSL MSL 1 -无限制,
INFINEON
晶体管, MOSFET, N沟道, 300 A, 100 V, 0.0017 ohm, 10 V, 2.7 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 2 A, 600 V, 4.4 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0054 ohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 2.37 A, 42 V, 0.165 ohm, 10 V, 1.8 V
(EN)ON SEMICONDUCTOR
单晶体管 双极, PNP, -80 V, 50 MHz, 1.5 W, 1.5 A, 25 hFE
(EN)STMICROELECTRONICS
单晶体管 双极, PNP, 60 V, 130 MHz, 1.6 W, 5 A, 300 hFE
(EN)NEXPERIA
单晶体管 双极, NPN, 80 V, 180 MHz, 650 mW, 1 A, 100 hFE
(EN)
NEXPERIA
单晶体管 双极, 开关, PNP, -60 V, 250 MHz, 1.15 W, -600 mA, 100 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 90 A, 60 V, 0.004 ohm, 10 V, 3.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 180 A, 100 V, 0.002 ohm, 10 V, 2.7 V
(EN)ON SEMICONDUCTOR
单晶体管 双极, 通用, NPN, 80 V, 130 MHz, 1.5 W, 1 A, 250 hFE
(EN)INFINEON
晶体管, MOSFET, N沟道, 115 A, 150 V, 0.005 ohm, 10 V, 3 V
(EN)
NEXPERIA
单晶体管 双极, AEC-Q101, NPN, 60 V, 160 MHz, 600 mW, 3 A, 75 hFE
(EN)DIODES INC.
单晶体管 双极, 达林顿, NPN, 140 V, 150 MHz, 2 W, 2 A, 15000 hFE
(EN)
VISHAY
晶体管, MOSFET, N沟道, 42 A, 30 V, 3200 μohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 9 A, -30 V, 17 mohm, -10 V, -1.7 V
(EN)
DIODES INC.
单晶体管 双极, NPN, 150 V, 100 MHz, 1 W, 1 A, 100 hFE
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 1.7 A, 45 V, 0.25 ohm, 5 V, 500 mV
(EN)INFINEON
晶体管, MOSFET, N沟道, 42 A, 100 V, 15 mohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 6.8 A, 100 V, 51 mohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -14 A, -100 V, 0.2 ohm, -10 V, -4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 43 A, 80 V, 0.014 ohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 47 A, 60 V, 0.011 ohm, 10 V, 1.7 V
(EN)
