规格：MSL MSL 1 -无限制,
DIODES INC.
单晶体管 双极, NPN, 300 V, 80 MHz, 3 W, 3.5 A, 200 hFE
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 180 A, 100 V, 0.0019 ohm, 10 V, 3.5 V
(EN)
STMICROELECTRONICS
IGBT Single Transistor, 40 A, 1.3 V, 200 W, 412 V, TO-263, 3 Pins
(EN)NEXPERIA
单晶体管 双极, NPN, 150 V, 30 MHz, 700 mW, 1 A, 250 hFE
(EN)
NEXPERIA
单晶体管 双极, PNP, -60 V, 130 MHz, 600 mW, -4.2 A, 295 hFE
(EN)
ROHM
晶体管, MOSFET, N沟道, 5 A, 60 V, 0.078 ohm, 10 V, 3 V
(EN)
NEXPERIA
单晶体管 双极, 通用, PNP, 45 V, 250 mW, 500 mA, 100 hFE
(EN)
ON SEMICONDUCTOR
单晶体管 双极, NPN, 50 V, 330 MHz, 3.5 W, 7 A, 200 hFE
(EN)
VISHAY
晶体管, MOSFET, N沟道, 28 A, 100 V, 77 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 160 A, 135 V, 0.0047 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 240 A, 40 V, 0.00055 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 120 A, 60 V, 0.00163 ohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 64 A, 200 V, 0.018 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -100 A, -75 V, 0.0062 ohm, -10 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -110 A, -60 V, 0.0065 ohm, -10 V, -3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -24 A, -20 V, 0.041 ohm, -4.5 V, -700 mV
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -12 A, -60 V, 0.047 ohm, -10 V, -2.6 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, NexFET?, N沟道, 50 A, 100 V, 0.0121 ohm, 10 V, 3 V
(EN)
NEXPERIA
双极晶体管阵列, 通用, PNP, 45 V, 200 mW, 100 mA, 290 hFE, SOT-363
(EN)
DIODES INC.
单晶体管 双极, NPN, 50 V, 115 MHz, 1.1 W, 4 A, 450 hFE
(EN)
ROHM
晶体管, MOSFET, N沟道, 2.5 A, 30 V, 0.05 ohm, 10 V, 2.5 V
(EN)
DIODES INC.
晶体管, MOSFET, 低电压, P沟道, 1.6 A, -30 V, 210 mohm, 10 V, -1 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 40 V, 0.00116 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 120 A, 100 V, 0.0017 ohm, 10 V, 3 V
(EN)ROHM
晶体管, MOSFET, P沟道, -6 A, -20 V, 0.0161 ohm, -4.5 V, -1.2 V
(EN)
