规格：MSL MSL 1 -无限制,
ROHM
单晶体管 双极, PNP, 20 V, 120 MHz, 500 mW, 4 A, 82 hFE
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 6 A, 42 V, 0.09 ohm, 10 V, 1.6 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 2.6 A, 52 V, 0.095 ohm, 10 V, 1.5 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -2.5 A, -20 V, 0.048 ohm, -4.5 V, -1 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 100 A, 200 V, 0.0079 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 64 A, 200 V, 0.018 ohm, 10 V, 4 V
(EN)ROHM
双路场效应管, MOSFET, N和P沟道, 100 mA, 20 V, 2.5 ohm, 4.5 V, 1 V
(EN)
DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 60 mA, 200 V, 25 ohm, 10 V, 1 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.004 ohm, 10 V, 2.6 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 100 A, 150 V, 0.0045 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, 80 A, 1.8 V, 290 W, 600 V, TO-247AB, 3 引脚
(EN)
DIODES INC.
单晶体管 双极, NPN, 75 V, 140 MHz, 2.5 W, 4.5 A, 450 hFE
(EN)
ROHM
双极晶体管阵列, 双路, NPN, PNP, 50 V, 300 mW, 150 mA, 120 hFE, SOT-457
(EN)
VISHAY
晶体管, MOSFET, N沟道, 14 A, 100 V, 0.16 ohm, 10 V, 4 V
(EN)ROHM
晶体管, MOSFET, P沟道, -3 A, -12 V, 0.03 ohm, -4.5 V, -1 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.5 A, 1 kV, 5.4 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 4.4 A, 500 V, 1.22 ohm, 10 V, 3.75 V
(EN)
ROHM
单晶体管 双极, NPN, 6 V, 800 MHz, 200 mW, 50 mA, 180 hFE
(EN)ROHM
单晶体管 双极, NPN, 50 V, 180 MHz, 150 mW, 150 mA, 120 hFE
(EN)
ROHM
单晶体管 双极, NPN, 160 V, 80 MHz, 1 W, 1 A, 120 hFE
(EN)ROHM
单晶体管 双极, NPN, 50 V, 250 MHz, 200 mW, 500 mA, 120 hFE
(EN)ROHM
单晶体管 双极, NPN, 100 V, 80 MHz, 1 W, 1 A, 1000 hFE
(EN)
ROHM
单晶体管 双极, NPN, 45 V, 200 MHz, 200 mW, 10 mA, 200 hFE
ROHM
晶体管 双极预偏置/数字, 单路PNP, -50 V, -100 mA, 4.7 kohm
(EN)ROHM
晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 2.2 kohm, 2.2 kohm
(EN)
