规格：MSL MSL 1 -无限制,
DIODES INC.
单晶体管 双极, NPN, 75 V, 140 MHz, 1.6 W, 3 A, 450 hFE
(EN)
DIODES INC.
单晶体管 双极, NPN, 45 V, 150 MHz, 2 W, 3 A, 500 hFE
(EN)
ROHM
晶体管, MOSFET, N沟道, 2.5 A, 30 V, 70 mohm, 10 V, 2.5 V
(EN)
ROHM
功率场效应管, MOSFET, N沟道, 24 A, 600 V, 0.15 ohm, 10 V, 4 V
(EN)
ROHM
双路场效应管, MOSFET, N和P沟道, 3.4 A, 80 V, 0.09 ohm, 10 V, 2.5 V
(EN)NEXPERIA
单晶体管 双极, NPN, 80 V, 180 MHz, 650 mW, 1 A, 63 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 2.4 A, -20 V, 52 mohm, -4.5 V, -800 mV
(EN)ROHM
晶体管, MOSFET, P沟道, -2.5 A, -30 V, 0.07 ohm, -10 V, -2.5 V
(EN)
NEXPERIA
双路场效应管, MOSFET, 双N沟道, 400 mA, 30 V, 1 ohm, 4.5 V, 900 mV
(EN)ROHM
晶体管, MOSFET, N沟道, 3 A, 45 V, 0.048 ohm, 4.5 V, 1.5 V
(EN)
ROHM
Silicon Carbide Power MOSFET, N Channel, 17 A, 1.2 kV, 0.16 ohm, 18 V, 5.6 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 13 A, 30 V, 8 mohm, 10 V, 1.8 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 30 A, 60 V, 0.01 ohm, 10 V, 2 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 120 A, 40 V, 0.00168 ohm, 10 V, 4 V
(EN)
ROHM
功率场效应管, MOSFET, 碳化硅 (SiC), N沟道, 3.7 A, 1.7 kV, 1.15 ohm, 18 V, 2.8 V
(EN)
ROHM
晶体管 双极预偏置/数字, NPN, 单路NPN, 50 V, 100 mA, 2.2 kohm, 2.2 kohm, 1 电阻比率
(EN)ROHM
晶体管 双极预偏置/数字, NPN, 单路NPN, 50 V, 100 mA, 22 kohm, 47 kohm, 0.47 电阻比率
(EN)INFINEON
晶体管, MOSFET, N沟道, 51 A, 55 V, 13.9 mohm, 10 V, 4 V
(EN)
ROHM
双路场效应管, MOSFET, 双N沟道, 1 A, 45 V, 0.3 ohm, 4.5 V, 1.5 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -5 A, -30 V, 0.022 ohm, -10 V, -2.5 V
(EN)ROHM
晶体管, MOSFET, N沟道, 5 A, 30 V, 0.026 ohm, 4.5 V, 1.5 V
(EN)ROHM
晶体管, MOSFET, P沟道, -4.5 A, -30 V, 0.025 ohm, -10 V, -2.5 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 20 A, 100 V, 0.033 ohm, 10 V, 2.5 V
(EN)ROHM
晶体管, MOSFET, N沟道, 3.5 A, 60 V, 0.05 ohm, 10 V, 3 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 2.5 A, 20 V, 0.039 ohm, 4.5 V, 300 mV
(EN)
