规格：MSL MSL 1 -无限制,
ROHM
晶体管, MOSFET, P沟道, -5 A, -12 V, 0.019 ohm, -4.5 V, -300 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 120 A, 40 V, 0.0026 ohm, 10 V, 3 V
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 3 A, 50 V, 0.11 ohm, 10 V, 3 V
(EN)
ROHM
单晶体管 双极, NPN, 120 V, 140 MHz, 200 mW, 50 mA, 180 hFE
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 34 A, 650 V, 0.1 ohm, 10 V, 5 V
(EN)ROHM
功率场效应管, MOSFET, N沟道, 11 A, 600 V, 0.34 ohm, 10 V, 5 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -3 A, -20 V, 0.055 ohm, -4.5 V, -2 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 200 mA, 60 V, 2.5 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 80 V, 0.0022 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 2.2 A, 30 V, 0.054 ohm, 4.5 V, 700 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 24 A, 200 V, 0.064 ohm, 10 V, 3 V
(EN)
ROHM
功率场效应管, MOSFET, N沟道, 31 A, 1.2 kV, 0.08 ohm, 18 V, 5.6 V
(EN)
NEXPERIA
单晶体管 双极, PNP, -80 V, 145 MHz, 650 mW, -1 A, 100 hFE
(EN)ROHM
晶体管 双极预偏置/数字, PNP, 单路PNP, -50 V, -100 mA, 47 kohm, 47 kohm, 1 电阻比率
(EN)
ON SEMICONDUCTOR
单晶体管 双极, PNP, -32 V, 225 mW, -100 mA, 215 hFE
(EN)ROHM
晶体管 双极预偏置/数字, 单路PNP, 50 V, -100 mA, 10 kohm, 10 kohm
(EN)ROHM
晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 47 kohm, 47 kohm
(EN)ON SEMICONDUCTOR
单晶体管 双极, 通用, NPN, 15 V, 300 mW, 200 mA, 120 hFE
(EN)ON SEMICONDUCTOR
单晶体管 双极, 通用, NPN, 60 V, 225 mW, 100 mA, 250 hFE
(EN)ROHM
Silicon Carbide Power MOSFET, N Channel, 70 A, 650 V, 0.03 ohm, 18 V, 5.6 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 100 A, 650 V, 0.03 ohm, 10 V, 5 V
(EN)
ROHM
单晶体管, IGBT, 场截止沟道, 40 A, 1.65 V, 161 W, 650 V, TO-263S, 3 引脚
(EN)
NEXPERIA
单晶体管 双极, PNP, -45 V, 145 MHz, 650 mW, -1 A, 63 hFE
(EN)
