规格：MSL MSL 1 -无限制,
ROHM
晶体管, MOSFET, 低栅极驱动器, N沟道, 100 mA, 30 V, 13 ohm, 4 V, 1.5 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 2 A, 60 V, 250 mohm, 4 V, 800 mV
(EN)
ROHM
晶体管, MOSFET, N沟道, 100 mA, 30 V, 5 ohm, 4 V, 1.5 V
(EN)
STMICROELECTRONICS
单晶体管 双极, NPN, 65 V, 15 W, 6 A, 320 hFE
(EN)STMICROELECTRONICS
单晶体管 双极, NPN, 40 V, 100 MHz, 1.4 W, 3 A, 280 hFE
(EN)STMICROELECTRONICS
单晶体管 双极, NPN, 60 V, 130 MHz, 1.4 W, 3 A, 80 hFE
(EN)STMICROELECTRONICS
单晶体管 双极, PNP, 60 V, 130 MHz, 1.4 W, -3 A, 160 hFE
(EN)
STMICROELECTRONICS
单晶体管 双极, 通用, NPN, 60 V, 130 MHz, 1.6 W, 3 A, 280 hFE
(EN)
STMICROELECTRONICS
单晶体管 双极, PNP, -40 V, 1.6 W, -5 A, 250 hFE
(EN)
STMICROELECTRONICS
单晶体管 双极, NPN, 60 V, 500 mW, 1 A, 250 hFE
(EN)STMICROELECTRONICS
单晶体管 双极, NPN, 60 V, 500 mW, 1 A, 250 hFE
(EN)
STMICROELECTRONICS
单晶体管 双极, 通用, NPN, 15 V, 500 mW, 2 A, 280 hFE
(EN)STMICROELECTRONICS
单晶体管 双极, NPN, 30 V, 500 mW, 1.5 A, 330 hFE
(EN)STMICROELECTRONICS
单晶体管 双极, NPN, 30 V, 500 mW, 1.5 A, 330 hFE
(EN)
ADVANCED POWER ELECTRONICS CORP
功率场效应管, MOSFET, N沟道, 400 mA, 600 V, 5 ohm, 10 V, 2 V
(EN)
BROADCOM LIMITED
晶体管, 射频FET, 5.5 V, 65 mA, 725 mW, 450 MHz, 10 GHz, SOT-343
(EN)BROADCOM LIMITED
晶体管, 射频FET, 高线性度, 7 V, 300 mA, 1 W, 50 MHz, 6 GHz, SOT-89
(EN)BROADCOM LIMITED
晶体管, 射频FET, 5 V, 120 mA, 725 mW, 450 MHz, 6 GHz, SOT-343
(EN)BROADCOM LIMITED
晶体管, 射频FET, 5 V, 100 mA, 270 mW, 450 MHz, 6 GHz, SOT-343
(EN)BROADCOM LIMITED
晶体管, 射频FET, 硅, 3 V, 500 mA, 500 mW, 450 MHz, 6 GHz, SOT-343
(EN)
INFINEON
晶体管, MOSFET, N沟道, 160 A, 40 V, 2.7 mohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 195 A, 40 V, 1.5 mohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 240 A, 40 V, 1.5 mohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 110 A, 55 V, 0.0049 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 21 A, 150 V, 0.082 ohm, 10 V, 2 V
(EN)
