规格：MSL MSL 1 -无限制,
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 3.6 A, 12 V, 0.063 ohm, 4.5 V, 850 mV
(EN)
INFINEON
晶体管, MOSFET, HEXFET, N沟道, 2 A, 55 V, 140 mohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 1 A, -20 V, 0.148 ohm, -10 V, -1.9 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 530 mA, 30 V, 1 ohm, 4.5 V, 900 mV
(EN)
VISHAY
双路场效应管, MOSFET, 双P沟道, -190 mA, -60 V, 4 ohm, -4.5 V, -3 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, 通用, PNP, -40 V, 200 MHz, 300 mW, -600 mA, 200 hFE
(EN)
ON SEMICONDUCTOR
单晶体管 双极, 通用, NPN, 25 V, 50 MHz, 225 mW, 50 mA, 50 hFE
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -1.2 A, -30 V, 0.09 ohm, -10 V, -1.15 V
(EN)ON SEMICONDUCTOR
单晶体管 双极, PNP, -45 V, 100 MHz, 225 mW, -800 mA, 60 hFE
(EN)
VISHAY
晶体管, MOSFET, P沟道, -50 A, -60 V, 0.012 ohm, -10 V, -3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 40 A, 80 V, 10.3 mohm, 10 V, 2.8 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 5.7 A, 100 V, 0.021 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 1 A, 200 V, 1.1 ohm, 10 V, 2 V
(EN)
ROHM
晶体管 双极预偏置/数字, AEC-Q101, 单路NPN, 50 V, 100 mA, 4.7 kohm, 47 kohm, 0.1 电阻比率
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -1 A, -20 V, 0.175 ohm, -4.5 V, -900 mV
(EN)DIODES INC.
单晶体管 双极, NPN, 40 V, 300 MHz, 200 mW, 600 mA, 100 hFE
(EN)
ON SEMICONDUCTOR
双极晶体管阵列, 双PNP, -65 V, 380 mW, 100 mA, 150 hFE, SOT-363
(EN)VISHAY
晶体管, MOSFET, P沟道, -2.7 A, -30 V, 0.158 ohm, -10 V, -3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 90 A, 60 V, 0.0022 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 95 A, 80 V, 0.0044 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 98 A, 120 V, 0.0066 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 44 A, 34 V, 0.0077 ohm, 10 V, 2 V
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 40 A, 30 V, 3.8 ohm, 10 V, 2 V
(EN)
