规格：MSL MSL 1 -无限制,
INFINEON
晶体管, MOSFET, N沟道, 42 A, 55 V, 0.027 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 30 A, 80 V, 0.0225 ohm, 10 V, 2.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 17 A, 100 V, 0.105 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 42 A, 55 V, 0.0065 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 37 A, 20 V, 15 mohm, 10 V, 2.1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 120 A, 20 V, 4 mohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 161 A, 30 V, 0.0026 ohm, 10 V, 2.3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 65 A, 30 V, 8.4 mohm, 10 V, 1.9 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 270 A, 60 V, 0.0019 ohm, 10 V, 2.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 30 A, 55 V, 35 mohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 47 A, 55 V, 0.022 ohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, 21 A, 1.9 V, 150 W, 400 V, TO-252AA, 3 引脚
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, 21 A, 1.9 V, 150 W, 400 V, TO-252AA, 3 引脚
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, 21 A, 1.25 V, 150 W, 400 V, TO-263AB, 3 引脚
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, 21 A, 1.25 V, 150 W, 400 V, TO-263AB, 3 引脚
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, 46 A, 1.17 V, 250 W, 360 V, TO-263AB, 3 引脚
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, 极性FET, N沟道, 10 A, 800 V, 1.1 ohm, 10 V, 5.5 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 22 A, 650 V, 0.145 ohm, 10 V, 5 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 50 A, 500 V, 0.125 ohm, 10 V, 5 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 60 A, 650 V, 0.052 ohm, 10 V, 5 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 64 A, 600 V, 0.1 ohm, 10 V, 5 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 140 A, 100 V, 11 mohm, 15 V, 5 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, LINEAR L2?, N沟道, 30 A, 500 V, 200 mohm, 10 V, 2.5 V
(EN)
