规格：MSL MSL 1 -无限制,
INFINEON
晶体管, MOSFET, N沟道, 74 A, 80 V, 0.0062 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, 4.6 A, -30 V, 70 mohm, -10 V, -3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 40 A, 80 V, 0.0096 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 10 A, 60 V, 14 mohm, 10 V, 2.4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, 达林顿, NPN, 30 V, 125 MHz, 350 mW, 1.2 A, 10000 hFE
(EN)
NEXPERIA
晶体管 双极预偏置/数字, BRT, 单路PNP, -50 V, -100 mA, 47 kohm, 47 kohm
(EN)
STMICROELECTRONICS
单晶体管 双极, NPN, 65 V, 15 W, 6 A, 320 hFE
(EN)
INFINEON
晶体管, MOSFET, P沟道, -11 A, -55 V, 0.175 ohm, -10 V, -4 V
(EN)
INFINEON
场效应管, MOSFET, P沟道, -30V, -100A, TDSON-8
INFINEON
晶体管, MOSFET, P沟道, -10 A, -30 V, 20 mohm, 10 V, -1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 170 A, 30 V, 0.0017 ohm, 10 V, 1.64 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 80 V, 0.0047 ohm, 10 V, 2.8 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 12 A, 40 V, 0.021 ohm, 10 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 64 A, 60 V, 0.0055 ohm, 10 V, 2.8 V
(EN)
NEXPERIA
单晶体管 双极, 通用, NPN, 45 V, 100 MHz, 250 mW, 100 mA, 110 hFE
(EN)INFINEON
晶体管, MOSFET, N沟道, 19 A, 100 V, 0.053 ohm, 10 V, 5 V
(EN)
TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, TSSOP
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -5.4 A, -12 V, 0.029 ohm, -4.5 V, -650 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -49 A, -30 V, 0.0027 ohm, -10 V, -1.7 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 300 V, 15 W, 500 mA, 30 hFE
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -60 V, 200 MHz, 350 mW, -800 mA, 100 hFE
(EN)
INFINEON
晶体管, MOSFET, P沟道, -3.7 A, -20 V, 0.05 ohm, -4.5 V, -550 mV
(EN)INFINEON
双路场效应管, MOSFET, N和P沟道, 4.7 A, 55 V, 50 mohm, 10 V, 1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 68 A, 80 V, 0.0076 ohm, 10 V, 4.9 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 17 A, 100 V, 0.09 ohm, 10 V, 4 V
(EN)
