规格：MSL MSL 1 -无限制,
VISHAY
Dual MOSFET, N and P Channel, 1.28 A, 20 V, 0.22 ohm, 4.5 V, 1 V
(EN)
VISHAY
双路场效应管, MOSFET, 双路, N和P沟道, 1.13 A, 20 V, 0.22 ohm, 4.5 V, 1 V
(EN)VISHAY
双路场效应管, MOSFET, 双N沟道, 1.1 A, 20 V, 0.195 ohm, 4.5 V, 1.5 V
(EN)VISHAY
双路场效应管, MOSFET, 双N沟道, 1.1 A, 20 V, 0.195 ohm, 4.5 V, 1.5 V
(EN)VISHAY
双路场效应管, MOSFET, 双N沟道, 700 mA, 20 V, 0.32 ohm, 4.5 V, 1.5 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 1.13 A, 20 V, 0.22 ohm, 4.5 V, 450 mV
(EN)VISHAY
双路场效应管, MOSFET, 双N沟道, 1.3 A, 20 V, 0.165 ohm, 4.5 V, 400 mV
(EN)VISHAY
双路场效应管, MOSFET, 双N沟道, 370 mA, 60 V, 1.4 ohm, 10 V, 2.5 V
(EN)VISHAY
双路场效应管, MOSFET, 双N沟道, 1.3 A, 20 V, 0.165 ohm, 4.5 V, 1.6 V
(EN)VISHAY
双路场效应管, MOSFET, 双N沟道, 1.3 A, 30 V, 0.185 ohm, 4.5 V, 1.6 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 3.6 A, 30 V, 0.055 ohm, 4.5 V, 600 mV
(EN)VISHAY
晶体管, MOSFET, P沟道, -2.4 A, -20 V, 100 mohm, -4.5 V, -950 mV
(EN)
VISHAY
晶体管, MOSFET, P沟道, -3.1 A, -20 V, 90 mohm, -4.5 V, -400 mV
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 3.6 A, 20 V, 0.056 ohm, 4.5 V, 650 mV
(EN)
VISHAY
晶体管, MOSFET, P沟道, -1.49 A, -30 V, 0.15 ohm, -10 V, -3 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -1.49 A, -30 V, 0.15 ohm, -10 V, -3 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -2.7 A, -30 V, 0.158 ohm, -10 V, -3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 500 mA, 30 V, 117 mohm, 10 V, 2 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -3.5 A, -8 V, 52 mohm, -4.5 V, -800 mV
(EN)VISHAY
晶体管, MOSFET, P沟道, -3.5 A, -30 V, 73 mohm, -10 V, -1 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 2.3 A, 60 V, 0.13 ohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 4.9 A, 20 V, 33 mohm, 4.5 V, 950 mV
(EN)VISHAY
晶体管, MOSFET, P沟道, -3 A, -12 V, 0.04 ohm, -4.5 V, -900 mV
(EN)
