规格：MSL MSL 1 -无限制,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 500 mA, 60 V, 5 ohm, 10 V, 2.1 V
(EN)
NEXPERIA
单晶体管 双极, 通用, NPN, 45 V, 100 MHz, 250 mW, 500 mA, 250 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -60 V, 200 MHz, 625 mW, -800 mA, 50 hFE
(EN)
ON SEMICONDUCTOR
单晶体管 双极, 通用, NPN, 65 V, 100 MHz, 150 mW, 100 mA, 100 hFE
(EN)
ON SEMICONDUCTOR
单晶体管 双极, NPN, 15 V, 225 mW, 200 mA, 40 hFE
(EN)
TEXAS INSTRUMENTS
双极晶体管阵列, NPN, 50 V, 500 mA, SOIC
(EN)
ON SEMICONDUCTOR
双极晶体管阵列, 通用, 双NPN, 65 V, 380 mW, 100 mA, 200 hFE, SOT-363
(EN)VISHAY
晶体管, MOSFET, P沟道, -5.3 A, -12 V, 32 mohm, -4.5 V, -1 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, NPN, 45 V, 100 MHz, 150 mW, 100 mA, 420 hFE
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, JFET, JFET, -25 V, 500 mA, 10 V, TO-92, JFET
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, 达林顿, NPN, 80 V, 100 MHz, 625 mW, 500 mA, 100 hFE
(EN)
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 47 kohm
(EN)
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, 单路PNP, 50 V, 100 mA, 2.2 kohm, 2.2 kohm, 1 电阻比率
(EN)ON SEMICONDUCTOR
单晶体管 双极, PNP, -30 V, 100 MHz, 150 mW, -100 mA, 125 hFE
(EN)
INFINEON
晶体管, 射频FET, 8 V, 40 mA, 200 mW, SOT-143
(EN)
INFINEON
晶体管, MOSFET, N沟道, 250 mA, 8 V
(EN)
ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, PNP, -150 V, 300 MHz, 225 mW, -500 mA, 50 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 4.5 A, 60 V, 55 mohm, 10 V, 2.2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 4 A, 60 V, 0.07 ohm, 10 V, 1.6 V
(EN)ON SEMICONDUCTOR
晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 10 kohm, 10 kohm, 1 电阻比率
(EN)INFINEON
晶体管 双极-射频, NPN, 12 V, 8 GHz, 580 mW, 80 mA, 70 hFE
(EN)ON SEMICONDUCTOR
晶体管 双极预偏置/数字, NPN和PNP执行, 50 V, 100 mA, 4.7 kohm, 47 kohm, 0.1 电阻比率
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -3.6 A, -20 V, 0.023 ohm, -4.5 V, -700 mV
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 190 mA, 100 V, 10 ohm, 5 V, 2 V
(EN)DIODES INC.
单晶体管 双极, NPN, 60 V, 175 MHz, 2 W, 3 A, 200 hFE
(EN)
