规格：MSL MSL 1 -无限制,
VISHAY
晶体管, MOSFET, N沟道, 30 A, 80 V, 0.0155 ohm, 10 V, 2 V
(EN)
ROHM
晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 2.2 kohm, 10 kohm, 0.22 电阻比率
(EN)
VISHAY
晶体管, MOSFET, N沟道, 18.2 A, 30 V, 0.0078 ohm, 10 V, 3 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 11 A, 600 V, 0.31 ohm, 10 V, 4 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 47 A, 30 V, 0.0094 ohm, 4.5 V, 1.3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 100 V, 3 MHz, 1.56 W, 3 A, 10 hFE
(EN)
VISHAY
晶体管, MOSFET, P沟道, 3.8 A, -200 V, 0.86 ohm, -10 V, -4 V
(EN)
NEXPERIA
双极晶体管阵列, AEC-Q101, 双NPN, 65 V, 300 mW, 100 mA, 200 hFE, SOT-363
(EN)
INFINEON
晶体管 双极-射频, NPN, 15 V, 5.5 GHz, 1 W, 120 mA, 70 hFE
(EN)
VISHAY
晶体管, MOSFET, P沟道, -8.2 A, -12 V, 0.0068 ohm, -1.8 V, -800 mV
(EN)
ROHM
单晶体管 双极, AEC-Q101, NPN, 30 V, 400 MHz, 200 mW, 1 A, 270 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 1 A, 100 V, 500 mohm, 10 V, 2.6 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 35 A, 100 V, 0.0225 ohm, 10 V, 4 V
(EN)
INFINEON
双路场效应管, MOSFET, 双P沟道, 9.2 A, -12 V, 17 mohm, -4.5 V, -900 mV
(EN)VISHAY
晶体管, MOSFET, N沟道, 6 A, 30 V, 0.023 ohm, 10 V, 2.5 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -7.2 A, -20 V, 25 mohm, -4.5 V, -800 mV
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 23 A, 100 V, 65 mohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 47 kohm, 47 kohm
(EN)
INFINEON
晶体管 双极-射频, NPN, 4.7 V, 45 GHz, 160 mW, 45 mA, 160 hFE
(EN)
ON SEMICONDUCTOR
双极晶体管阵列, 通用, 双PNP, -65 V, 380 mW, -100 mA, 220 hFE, SOT-363
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 12.5 A, 30 V, 9.5 mohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 2 A, 30 V, 0.085 ohm, 10 V, 1.75 V
(EN)
NEXPERIA
双极晶体管阵列, PNP, 30 V, 250 mW, -100 mA, 420 hFE, SOT-143
(EN)
ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, PNP, 60 V, 12.5 W, 1.5 A, 25 hFE
(EN)
DIODES INC.
单晶体管 双极, NPN, 160 V, 130 MHz, 1 W, 600 mA, 80 hFE
(EN)
