规格：MSL MSL 1 -无限制,
ON SEMICONDUCTOR
双路场效应管, MOSFET, N和P沟道, 4 A, 20 V, 45 mohm, 4.5 V, 1.2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 90 A, 25 V, 0.0011 ohm, 10 V, 1.4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.0012 ohm, 10 V, 2 V
(EN)
NEXPERIA
单晶体管 双极, PNP, 45 V, 145 MHz, 500 mW, 1 A, 100 hFE
(EN)
VISHAY
晶体管, MOSFET, N沟道, 1.5 A, 100 V, 250 mohm, 10 V, 4 V
(EN)
DIODES INC.
单晶体管 双极, NPN, 350 V, 50 MHz, 300 mW, 500 mA, 30 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -20 A, -30 V, 0.0107 ohm, -10 V, -1.9 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 7 A, 30 V, 30 mohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 18 A, 60 V, 54 mohm, 5 V, 1.8 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 1.3 A, 100 V, 270 mohm, 5 V, 2 V
(EN)
NEXPERIA
双路场效应管, MOSFET, 双N沟道, 350 mA, 30 V, 1 ohm, 4.5 V, 900 mV
(EN)
ON SEMICONDUCTOR
晶体管, JFET, 40 V, 50 μA, 130 μA, 4 V, SOT-883, JFET
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 3.9 A, 800 V, 1.2 ohm, 10 V, 3 V
(EN)
NEXPERIA
单晶体管 双极, PNP, -100 V, 85 MHz, 250 mW, -100 mA, 30 hFE
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 1.5 A, 60 V, 0.176 ohm, 10 V, 1.7 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 1.4 A, 30 V, 220 mohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 30 V, 1.7 mohm, 10 V, 1 V
(EN)
ROHM
晶体管 双极预偏置/数字, AEC-Q101, 单路NPN, 50 V, 100 mA, 2.2 kohm, 10 kohm, 0.22 电阻比率
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 19.6 A, 30 V, 3.4 mohm, 10 V, 2.5 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 30 V, 2.9 mohm, 8 V, 1.1 V
(EN)
INFINEON
晶体管, MOSFET, 汽车, N沟道, 5.1 A, 55 V, 0.0462 ohm, 10 V, 4 V
(EN)
NEXPERIA
单晶体管 双极, NPN, 60 V, 220 MHz, 250 mW, 1 A, 500 hFE
(EN)VISHAY
晶体管, MOSFET, P沟道, -8.7 A, -30 V, 14 mohm, -10 V, -3 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 5.47 A, 20 V, 0.021 ohm, 10 V, 950 mV
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 24 A, 80 V, 37 mohm, 10 V, 3 V
(EN)
